BSC015NE2LS5IATMA1 vs ISC0802NLSATMA1 Perbandingan
Perbandingan bersamaan detil BSC015NE2LS5IATMA1 dari Infineon dan ISC0802NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC015NE2LS5IATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | 22 A |
| Continuous Drain Current (ID) at Tc | 100 A | 150 A |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| Paket | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 (Power MOSFET) |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +175 C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Series | — | OptiMOS 5 |
| Part Number | — | ISC0802NLSATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| RDS(on) max at VGS=10V | — | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | — | 2.5 W |
| Power Dissipation (Pd) at Tc | — | 125 W |