BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon
MPN: BSC047N08NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.94 | $0.94 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.46 | $2,300.00 |
Drop-in alternatives for BSC047N08NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC047N08NS3 G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC060N10NS3GATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC022N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →BSC076N06NS3GATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →NTMFS6H848N
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA52DP
✅ Drop-In📋 Reference alternative (not in catalog)
BSC047N08NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 |
| Technology | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) max | 80 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Continuous Drain Current (ID) at Ta | 18 A |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | 125 W |
| Power Dissipation (Ta) | 2.5 W |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) |
| Avalanche Rated | 100% tested |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free |
BSC047N08NS3GATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source connection (low-side return path) |
| Pin 3 | Source — Source connection (parallel with pin 2 for low R_DS(on)) |
| Pin 4 | Source — Source connection (gate return, kelvin sense) |
| Pin 5 | Drain — Drain connection (internally shorted to pin 6-8 and exposed pad) |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
BSC047N08NS3GATMA1 is suitable for 7 applications: 48 V Server / Telecom DC-DC Converter, Solar Micro-Inverter Power Stage, Hot-Swap / OR-ing FET in 48 V Distribution, Brushless DC Motor Drive (Automotive Auxiliary), Synchronous Rectification in Isolated DC-DC Brick, Battery Management Protection FET (Multi-Cell Li-ion), Telecom 48 V POL (Point-of-Load) Module.
48 V Server / Telecom DC-DC Converter
The BSC047N08NS3GATMA1 is a strong fit as the synchronous rectifier (low-side FET) in 48 V-input isolated and non-isolated DC/DC bricks used in hyperscale servers and telecom rectifiers. Its 80 V VDS rating gives 25 V of headroom above a 48 V nominal bus, comfortably absorbing transients on hot-swap insertion. The 4.7 mOhm RDS(on) keeps conduction loss under 1 % at 30 A output, while the OptiMOS™ 3 FOM enables 300 kHz to 1 MHz switching with acceptable switching loss. Designers typically pair it with a digital controller such as the XAIPART-sourced IPD90N06S407ATMA2 for the primary-side switch. The SuperSO8 5x6 footprint simplifies two-side cooling layouts in 1U and 2U power shelves.
Recommended
Solar Micro-Inverter Power Stage
For solar micro-inverter power stages running off a 40 V - 60 V PV bus, the BSC047N08NS3GATMA1 delivers the combination of 80 V VDS rating, 4.7 mOhm RDS(on), and SuperSO8 thermal performance required for high-frequency hard-switching. The exposed drain pad dissipates up to 125 W with proper copper, removing the need for an active heatsink at 50 kHz switching and 25 A RMS operation. Compared to a 100 V part, the BSC047N08NS3GATMA1 saves roughly 20 % conduction loss, directly improving CEC-weighted inverter efficiency. Gate drive from a TI UCC27714 or equivalent half-bridge driver matches the part's normal-level VGS(th) cleanly. The result is a compact, single-board micro-inverter module.
Recommended
Hot-Swap / OR-ing FET in 48 V Distribution
The BSC047N08NS3GATMA1 is widely used as a Hot-Swap or OR-ing MOSFET in 48 V power-distribution backplanes, where it controls inrush current and isolates redundant feeds. Its 80 V VDS rating and 100 A continuous ID support the full 48 V bus plus transients during plug-in events. The 4.7 mOhm RDS(on) minimizes steady-state voltage drop across the OR-ing FET - critical for high-current feeds where even 10 mOhm of extra resistance translates into watts of loss. The part's 100 % avalanche rating handles the inductive kick from hot-plug events gracefully, and the SuperSO8 footprint is the same as industry-standard SO-8 power packages, easing layout migration from legacy designs.
Recommended
Brushless DC Motor Drive (Automotive Auxiliary)
For 12 V - 48 V BLDC motor drives used in automotive auxiliaries such as electric power steering, water pumps, and cooling fans, the BSC047N08NS3GATMA1 acts as the low-side or three-phase bridge FET. The 80 V VDS rating tolerates the inductive spike when the MOSFET switches off the motor winding. Its 4.7 mOhm RDS(on) reduces conduction loss across the bridge, while the SuperSO8 package supports PCB-side cooling in the cramped ECU environment. The part is qualified to JEDEC standards for industrial and automotive-grade applications, providing the reliability margin that 12 V - 48 V body-electronics designs demand.
Recommended
Synchronous Rectification in Isolated DC-DC Brick
In isolated half-bridge and full-bridge DC/DC bricks (12 V - 48 V output telecom bricks), the BSC047N08NS3GATMA1 serves as the synchronous rectifier on the secondary side, replacing Schottky diodes to gain 1 % - 3 % efficiency. Its body diode is characterized for synchronous-rectifier duty, so no external clamp is needed. The low gate charge of the OptiMOS™ 3 die keeps the synchronous FET from lagging the primary switch at 200 kHz - 500 kHz, and the 4.7 mOhm RDS(on) supports 30 A - 50 A output rails at 25 - 40 W per device. Designers typically use two BSC047N08NS3GATMA1 in parallel for 100 A bricks.
Recommended
Battery Management Protection FET (Multi-Cell Li-ion)
For battery management systems (BMS) on multi-cell Li-ion packs up to 12S (50.4 V max), the BSC047N08NS3GATMA1 can be used as the charge / discharge protection MOSFET on the high-current path. Its 80 V VDS rating exceeds the 12S pack voltage with margin, and its 100 A ID handles continuous discharge of mid-power e-mobility packs. The 4.7 mOhm RDS(on) keeps the IR drop small across the protection FET, preserving battery runtime. The SuperSO8 5x6 footprint is much smaller than a D2PAK alternative, enabling compact BMS boards for power tools, e-bikes, and small EV auxiliaries.
Recommended
Telecom 48 V POL (Point-of-Load) Module
For 48 V-input point-of-load (POL) modules delivering 1 V - 12 V at 20 A - 50 A to ASICs and FPGAs, the BSC047N08NS3GATMA1 functions as the high-side FET in a buck or buck-derived topology. The 80 V VDS rating absorbs 48 V bus transients and ringing without avalanching, and the 4.7 mOhm RDS(on) keeps the high-side conduction loss manageable at high duty cycle. The OptiMOS™ 3 FOM reduces the high-side switching loss to under 1 % at 500 kHz, supporting high-density POL modules where efficiency at light load (10 % - 30 %) is the dominant design constraint for telecom ASICs.
Recommended
Recommended Products Summary
Engineering reference data for BSC047N08NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC047N08NS3 G | BSC060N10NS3GATMA1 | BSC022N04LS6ATMA1 | BSC076N06NS3GATMA1 | NTMFS6H848N | SiRA52DP |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | SO-8FL (5x6 mm) | PowerPAK SO-8 (5x6 mm) |
| VDS max | 80 V | 80 V | 100 V | 40 V | 60 V | 80 V | 80 V |
| Continuous ID (Tc) | 100 A | 100 A | 90 A | 100 A | 100 A | 95 A | [DATA_NEEDED] |
| RDS(on) max | 4.7 mOhm | 4.7 mOhm | 6.0 mOhm | 2.2 mOhm | 7.6 mOhm | 5.0 mOhm | 5.0 mOhm |
| Technology | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 5 | OptiMOS™ 3 | Onsemi shield-gate trench | Vishay TrenchFET Gen IV |
| Avalanche Rated | Yes (100%) | Yes (100%) | Yes (100%) | Yes (100%) | Yes (100%) | Yes | Yes |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lowest RDS(on) in Infineon 80 V SuperSO8 family (vs BSC076N06NS3GATMA1 (60 V))
- 80 V VDS gives 67 % margin on 48 V telecom bus (vs BSC060N10NS3GATMA1 (100 V))
- Cross-brand 80 V drop-in alternative available (vs NTMFS6H848N (onsemi))
- OptiMOS™ 3 trench technology with optimized FOM (vs SiRA52DP (Vishay))
Design Notes
The BSC047N08NS3GATMA1 is rated for 125 W at Tc=25 °C, but this requires the exposed drain pad to be soldered to a copper pour of at least 6 cm² on a 40 x 40 x 1.5 mm FR4 board (one layer, 70 °m copper). On a 4-layer board with 2 oz inner copper and 1 oz outer copper, the thermal resistance theta_JA drops to roughly 40 °C/W, allowing 8 W - 10 W continuous dissipation without a heatsink. For higher dissipation, add a top-side copper pour or thermal vias to an inner copper plane.
Use a star-grounded Kelvin source connection: tie pin 4 (Source) directly to the gate-driver ground return rather than to the power ground. This isolates the gate-drive loop from the high-current source path and prevents the source inductance from ringing the gate during turn-off. Place the gate resistor (typically 4.7 × to 10 ×) within 5 mm of pin 1, and use a 100 kΩ pull-down on the gate to ensure the MOSFET stays off during power-up.
Do not exceed the datasheet SOA curve: at 80 V VDS the DC current is limited to under 6 A continuously, while at 40 V it rises to 25 A. Exceeding SOA reduces avalanche ruggedness and shortens lifetime even if Tj stays below 175 °C. For switching applications, use the pulse curves (100 ms or single pulse) for sizing. Also verify that the gate-driver supply stays within the 4.5 V - 10 V VGS range - the part is normal-level only and will not turn on at 3.3 V logic drive.
Keep the power loop (input cap, high-side FET, low-side FET, return) under 5 nH total inductance to limit the turn-off voltage spike below the 80 V VDS rating. Use 2 oz copper on top and bottom layers for the power loop, and place the input ceramic capacitor (1 µF - 4.7 µF X7R) within 2 mm of the drain-source terminals. For synchronous-rectifier duty, add a small RC snubber (10 Ω + 1 nF) across the FET to damp ringing at the switching node.
Compliance Information
Per Infineon datasheet: Pb-free plating, RoHS compliant (2011/65/EU), halogen-free per JEDEC JS709B, JEDEC-qualified for target applications. Industrial grade - not AEC-Q100 qualified; see automotive-grade equivalents for AEC-Q100.
