BSC016N06NSATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC016N06NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | 26 nC (typ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.7 V (typ) |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Operating Temperature Range | -55 °C to +150 °C | — |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 60 V trench-gate |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Operating Junction Temperature | — | -55°C to +150°C |