BSC019N04LSTATMA1 vs BSC019N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSC019N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveInfineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04LSTATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.92 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 161 A | β |
| Continuous Drain Current (ID, Ta=25C) | 28 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | β |
| Total Gate Charge Qg typ | 85 nC | β |
| Power Dissipation PD (Tc=25C) | 94 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (junction) |
| Package | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | Yes | Yes |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC019N06NSATMA1 |
| Technology / Family | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 100 A |
| On-State Resistance RDS(on) Max @ VGS=10V | β | 1.95 mΞ© (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | β | 3.3 V |
| Power Dissipation (PD) at TA=25C | β | 136 W |
| Channel Type | β | N-Channel Enhancement Mode |
| Lead-Free | β | Yes |