BSC019N06NSATMA1 - 60V 100A 1.95mΩ OptiMOS 5 MOSFET | Infineon
MPN: BSC019N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.76 | $17.60 |
| 100 | $1.45 | $145.00 |
| 500 | $1.22 | $610.00 |
| 1,000 | $1.05 | $1,050.00 |
| 3,000 | $0.92 | $2,760.00 |
BSC019N06NSATMA1 Overview
What is an OptiMOS power MOSFET? An OptiMOS power MOSFET is a trench-gate N-channel enhancement-mode MOSFET optimized by Infineon for switching power-conversion applications. It belongs to the hierarchy: power MOSFET -> discrete semiconductor -> voltage-controlled switch -> power management component. OptiMOS 5 specifically targets low RDS(on), low gate charge, and improved body-diode robustness for synchronous rectification, motor control, and DC-DC converter primary-side switching.
Key features include 1.95 mΩ maximum RDS(on) at VGS=10V, an extended temperature rating that improves thermal cycling reliability versus the prior OptiMOS generation, and a low-profile SuperSO8 5x6 mm package with an exposed drain pad for direct PCB heatsinking. The device is avalanche-rated and qualified for industrial-grade operating conditions, making it suitable for harsh-environment switching.
The architecture is built on Infineon's OptiMOS 5 trench process, which shrinks the cell pitch to lower on-state resistance per unit silicon area while reducing gate charge (Qg) for faster switching. The PG-TDSON-8 FL package's flip-chip variant (FL) places the die on top of the lead frame with the drain tab exposed at the bottom, maximizing heat transfer to the PCB copper and supporting continuous high-current operation without an external heatsink.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, motor drive H-bridges in industrial automation and e-mobility, battery management protection FETs in 12V/24V Li-ion packs, solar micro-inverter power stages, and high-current load switches in hot-swap / OR-ing circuits. The 60V rating comfortably supports 24V and 48V nominal buses with substantial transient margin.
When designing with BSC019N06NSATMA1, choose a gate driver capable of sourcing/sinking at least 2A to fully enhance the FET within tens of nanoseconds. Place the gate-source resistor (typically 10-100 kΩ) close to the GS pins to prevent parasitic turn-on, and minimize the high-dV/dt power loop area for EMC compliance.
This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-15, drop-in alternatives in the same PG-TDSON-8 FL package, and practical design notes not collected in the manufacturer's brief summary, providing engineers a single reference for evaluation, sourcing, and PCB layout.
Drop-in alternatives for BSC019N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC019N06NSATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Continuous Drain Current (ID) at TA=25C, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC019N08NS5ATMA1
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View Datasheet →BSC019N04LSTATMA1
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View Datasheet →BSC050N04LSGATMA1
✅ Drop-In✓ In Stock
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View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IPC50N04S5L5R5ATMA1
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View Datasheet →BSC019N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC019N06NSATMA1 |
| Technology / Family | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) at TA=25C | 100 A |
| On-State Resistance RDS(on) Max @ VGS=10V | 1.95 mΩ (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | 3.3 V |
| Power Dissipation (PD) at TA=25C | 136 W |
| Operating Temperature Range | -55C to +150C (junction) |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| Channel Type | N-Channel Enhancement Mode |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes |
BSC019N06NSATMA1 Pin Configuration
| Pin 1 | Source — Source connection (internally connected to pins 2 and 3) |
| Pin 2 | Source — Source connection (internally connected to pins 1 and 3) |
| Pin 3 | Source — Source connection (internally connected to pins 1 and 2) |
| Pin 4 | Gate — Gate drive input; use 10-100 kΩ pull-down to source |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | Drain — Drain connection (internally connected to pins 7 and 8 and thermal pad) |
| Pin 7 | Drain — Drain connection (internally connected to pins 6 and 8 and thermal pad) |
| Pin 8 | Drain — Drain connection (internally connected to pins 6 and 7 and thermal pad) |
| Pin 9 | Drain (Thermal Pad) — Exposed drain pad for PCB heatsinking (main thermal path) |
Safe Operating Area (DC)
Typical Applications
BSC019N06NSATMA1 is suitable for 6 applications: 48V Telecom/Server DC-DC Synchronous Rectification, 24V Brushless DC Motor Drive H-Bridge, 12V/24V Battery Management Protection FET, Solar Micro-Inverter Power Stage, High-Current Hot-Swap / OR-ing Load Switch, E-Mobility / E-Bike DC-DC Converter.
48V Telecom/Server DC-DC Synchronous Rectification
BSC019N06NSATMA1 fits 48V secondary-side synchronous rectification because its 60V VDS rating handles the nominal 48V rail plus reflected ripple and transient spikes from the primary-side switching. The 1.95 mΩ RDS(on) at VGS=10V keeps conduction loss below 1% at 50A output, and the SuperSO8 package's exposed drain pad dissipates heat directly to inner-layer copper. Compared to a Schottky diode pair, the FET eliminates reverse-recovery loss and improves efficiency by 2-4% in 48V-to-12V/5V bus converters. Design tip: use a 10V gate drive and place the gate-source 100kΩ pull-down within 5mm of the GS pins to suppress parasitic turn-on during the high-dV/dt transition.
Recommended
24V Brushless DC Motor Drive H-Bridge
BSC019N06NSATMA1 serves as the low-side and high-side switch in 24V BLDC motor drive H-bridges for industrial pumps, fans, and e-bike traction. Its 100A continuous ID rating handles motor inrush, while the 60V VDS absorbs the inductive flyback from motor winding commutation when paired with a bootstrap gate driver. The SuperSO8 5x6 mm footprint keeps each half-bridge compact, and the low Qg (OptiMOS 5 typical) reduces driver loss at 20-50 kHz PWM frequencies. Trade-off: at VIN=24V and 30A continuous per FET, conduction loss is approximately 1.75W per device, so PCB copper area must be sized to keep the junction below 125C.
Recommended
12V/24V Battery Management Protection FET
BSC019N06NSATMA1 is well-suited as the high-side or low-side protection FET in 12V and 24V Li-ion battery management systems where it must carry continuous charge/discharge currents of 50-100A and interrupt fault currents above that within microseconds. Its 60V VDS rating covers the worst-case transient of a fully charged 24V nominal pack under load dump, and the avalanche rating absorbs inductive kickback when the FET turns off into a shorted load. Compared to a dedicated battery-protection IC, a discrete FET gives designers flexibility on Rds(on) and package. Design tip: add a TVS diode across drain-source to clamp avalanche energy and extend FET lifetime.
Recommended
Solar Micro-Inverter Power Stage
BSC019N06NSATMA1 can serve as the primary-side switch in 60V-class solar micro-inverter power stages converting a 30-50V PV panel input to a 230V AC mains output. Its low Qrr (OptiMOS 5 typical) reduces reverse-recovery loss in hard-switched topologies, and the 60V VDS handles the reflected voltage on the primary winding plus leakage spike margin. Compared to IGBTs at this voltage/current class, the MOSFET delivers faster switching (100 kHz+) and higher efficiency at partial load. Trade-off: a gate driver with at least 2A source/sink capability is required to fully enhance the FET within the target switching period.
Recommended
High-Current Hot-Swap / OR-ing Load Switch
BSC019N06NSATMA1 is used as the pass element in -48V telecom or 24V/48V server hot-swap and OR-ing controllers where it must handle inrush currents above 200A during board insertion while the load capacitance charges. Its 60V VDS rating covers the bus voltage with margin, and the 1.95 mΩ RDS(on) keeps the steady-state voltage drop below 100mV at 50A load. The SuperSO8 package's thermal pad connects directly to inner-layer copper for heat spreading. Design tip: use the device in linear-mode turn-on (gate ramp via RC) to limit di/dt, then switch to fully-enhanced operation for low loss.
Recommended
E-Mobility / E-Bike DC-DC Converter
BSC019N06NSATMA1 works as the primary switch in 48V e-bike or low-power e-mobility DC-DC converters stepping down to 12V auxiliaries. The 60V VDS rating tolerates regen-braking transients on the 48V bus, and the OptiMOS 5 efficiency at partial load extends battery range. The SuperSO8 5x6 mm footprint fits the compact controller enclosure typical of e-bike designs. Compared to mechanical relays, the solid-state switch enables silent, software-controlled power sequencing. Trade-off: thermal management becomes critical when the converter operates at high ambient (50-60C inside a sealed motor housing); use multiple thermal vias under the drain pad.
Recommended
Recommended Products Summary
Engineering reference data for BSC019N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC019N08NS5ATMA1 | BSC019N04LSTATMA1 | BSC050N04LSGATMA1 | ISC015N06NM5ATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) Max | 60 V | 80 V (+33%) | 40 V (-33%) | 40 V (-33%) | 60 V (same) | 40 V (-33%) |
| RDS(on) Max @ VGS=10V | 1.95 mΩ (typ) | ~2.1 mΩ (+8%) | ~1.5 mΩ (-23%) | ~5.0 mΩ (+156%) | ~1.5 mΩ (-23%) | ~5.5 mΩ (+182%) |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | 3.3 V (typical OptiMOS 5) | 2.5-3.5 V | 2.5-3.5 V | 3.3 V (typical OptiMOS 5) | 2.5-3.5 V |
| Technology / Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (PD) | 136 W | 136 W (same package) | 136 W (same package) | 136 W (same package) | 136 W (same package) | 136 W (same package) |
Key Differentiators
- Highest VDS rating in the OptiMOS 5 PG-TDSON-8 FL 1.95 mΩ class (vs BSC019N04LSTATMA1)
- Lower RDS(on) than higher-VDS sister part (vs BSC019N08NS5ATMA1)
- Established OptiMOS 5 platform with broad distributor stock (vs Generic 60V MOSFETs in SO-8)
Design Notes
At continuous ID=50A, RDS(on)=1.95 mΩ gives conduction loss P=I^2*R = 50^2 * 0.00195 = ~4.9W. With PG-TDSON-8 FL thermal resistance RθJA around 50 C/W on a standard JEDEC 1s0p test board, junction temperature rises 245C above ambient - clearly requiring substantial PCB copper. Estimated: at TA=70C inside an enclosure, total thermal budget allows only ~1.5W dissipation before reaching Tj=150C. Use at least 1 square inch of 2 oz copper on top and bottom layers, stitched with thermal vias under the drain pad, to achieve RθJA closer to 30 C/W.
The exposed drain pad (pin 9) of the PG-TDSON-8 FL must be soldered to a copper land on the PCB with an array of thermal vias connecting to inner copper layers for heat spreading. Use at least 9 thermal vias in a 3x3 array, 0.3mm diameter, filled or plugged to prevent solder wicking. Place the gate-drive loop (gate resistor, gate-source pull-down, driver output) on the opposite side of the PCB or routed to minimize the high-dV/dt power loop area, which reduces ringing and EMC emissions.
Do not operate BSC019N06NSATMA1 above VDS=60V even for brief transients - the absolute maximum rating is not a working point. Always include a TVS diode or snubber across drain-source when switching inductive loads (motors, transformers, solenoids) to clamp avalanche energy. Do not omit the 10-100 kΩ gate-source resistor; without it, the high dV/dt on the drain can charge the Miller capacitance and cause parasitic turn-on, leading to shoot-through in half-bridge configurations.
Minimize the source-inductance loop between the FET source pins (1-3) and the gate-driver ground return by placing the driver within 10mm of the gate pin. Route the gate trace over a continuous ground plane on an inner layer to shield it from the high-dV/dt drain node. For half-bridge layouts, place the high-side and low-side FETs close together with their drains/sources facing inward, and place the bootstrap capacitor directly across the high-side FET's source-to-drain terminals to minimize parasitic inductance.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, look at Infineon's automotive-grade OptiMOS 5 variants. Halogen-free per JEDEC JS709B definition.
