BSC019N06NSATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of BSC019N06NSATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β Active
Specification Comparison
| Parameter | BSC019N06NSATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC019N06NSATMA1 | β |
| Technology / Family | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 100 A | 33 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-State Resistance RDS(on) Max @ VGS=10V | 1.95 mΞ© (typ) | β |
| Gate-Source Threshold Voltage VGS(th) Typ | 3.3 V | β |
| Power Dissipation (PD) at TA=25C | 136 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| Channel Type | N-Channel Enhancement Mode | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |