BSC019N08NS5ATMA1 vs BSC0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N08NS5ATMA1 disebabkan oleh Infineon dan BSC0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC019N08NS5ATMA1 BSC0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 5 (N-channel trench) OptiMOS 25V N-Channel Power MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Gambaran Suhu Operasi -55 C to +150 C -55 C to +150 C
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-6 (5x6 mm with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance (RDS(on)) at VGS=10V — 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — 2.2 V max
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 69 W
Kiraan Pin — 8
Boson Bebas — Yes

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