BSC030N08NS5ATMA1 vs BSC039N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC030N08NS5ATMA1 by Infineon and BSC039N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 β ActiveInfineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N08NS5ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | N-Channel Power MOSFET | β |
| Technology | OptiMOS 5 | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (ID,pulse) | 161 A | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| RDS(on) max at VGS=10 V | 3.0 mOhm | β |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | β |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | β |
| Power Dissipation (TC=25C) | 139 W | β |
| Operating Temperature Range (TJ) | -55C to +150C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | β |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | β |
| Optimized Application | Synchronous Rectification | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA | β | 19 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | β | 2.5 W |
| Power Dissipation at TC (PD) | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| Number of Pins | β | 8 |
| Gate Drive Voltage (VGS) | β | Β±20 V max |