BSC030N08NS5ATMA1 vs BSC039N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC030N08NS5ATMA1 sa pamamagitan ng Infineon at BSC039N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 ✓ NakahandaInfineon
BSC039N06NSATMA1 - 60V 3.9mΩ 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC030N08NS5ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | N-Channel Power MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (ID,pulse) | 161 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max at VGS=10 V | 3.0 mOhm | — |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | — |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | — |
| Power Dissipation (TC=25C) | 139 W | — |
| Operating Temperature Range (TJ) | -55C to +150C | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | — |
| Optimized Application | Synchronous Rectification | — |
| Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Bilang ng Pins | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |