BSC030N08NS5ATMA1 vs BSC039N06NSATMA1 Comparaison
Comparaison détaillée côte à côte de BSC030N08NS5ATMA1 par Infineon et BSC039N06NSATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC030N08NS5ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,55 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | N-Channel Power MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (ID,pulse) | 161 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max at VGS=10 V | 3.0 mOhm | — |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | — |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | — |
| Power Dissipation (TC=25C) | 139 W | — |
| Operating Temperature Range (TJ) | -55C to +150C | — |
| Boîtier | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Yes | — |
| Lead-Free | Yes | — |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | — |
| Optimized Application | Synchronous Rectification | — |
| Series | — | OptiMOS 5 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Température de jonction en fonctionnement | — | -55C to +150C |
| Nombre de broches | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |