BSC032N04LSATMA1 vs IPB038N12N3GATMA1 Comparison
Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and IPB038N12N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC032N04LSATMA1
BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC032N04LSATMA1 β Active
Specification Comparison
| Parameter | BSC032N04LSATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 21 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 98 A | β |
| RDS(on) max at VGS=10V | 3.2 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 52 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Technology | OptiMOS 5 trench | OptiMOS trench MOSFET |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 120V |
| Drain-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) @ Tc | β | 120 A |
| Power Dissipation (Pd) @ Tc | β | 300 W |
| On-State Resistance (Rds(on)) | β | 3.8 mOhm (typical) |
| Package / Case | β | PG-TO263-3 (D2PAK) |
| Gate Drive | β | Logic-level compatible |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Standard Package Quantity | β | 1000 (Tape & Reel) |
| Avalanche Rated | β | Yes |