BSC034N06NSATMA1 vs BSC0993NDATMA1 Comparison
Detailed side-by-side comparison of BSC034N06NSATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC034N06NSATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg value] |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Technology | OptiMOS 5 | OptiMOS 5 trench MOSFET |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TISON-8 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |