BSC034N06NSATMA1 vs BSC0993NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC034N06NSATMA1 disebabkan oleh Infineon dan BSC0993NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC034N06NSATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: Qg value]
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
Gambaran Suhu Operasi -55C to +150C -55C to +150C (junction)
Technology OptiMOS 5 OptiMOS 5 trench MOSFET
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TISON-8
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]

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