BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
MPN: BSC034N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
Drop-in alternatives for BSC034N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC027N06LS5ATMA1
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →BSC066N06NSATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →ISC011N03L5SATMA1
✅ Drop-In✓ In Stock
$0.47 / Unit
View Datasheet →IRLB8748PBF
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →BSZ036NE2LSATMA1
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →NTTFS006N60
✅ Drop-In📋 Reference alternative (not in catalog)
BSC034N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm |
| Power Dissipation at Ta=25C | 2.5 W |
| Power Dissipation at Tc=25C | 74 W |
| Operating Temperature Range | -55C to +150C |
| Technology | OptiMOS 5 |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
BSC034N06NSATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | SOURCE — Source connection |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | SOURCE — Source connection |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | DRAIN — Drain connection |
Safe Operating Area (DC)
Typical Applications
BSC034N06NSATMA1 is suitable for 6 applications: 48V Telecom Isolated DC-DC Brick, Server 12V Hot-Swap Switch, E-Mobility Motor Drive, Lithium-Ion Battery Management Protection, Synchronous Buck Converter Point-of-Load, Solar Micro-Inverter Power Stage.
48V Telecom Isolated DC-DC Brick
The BSC034N06NSATMA1 fits 48V telecom isolated DC-DC bricks on the secondary-side synchronous rectifier. Its 3.4 mOhm RDS(on) at VGS=10V minimizes conduction loss at 30-60 A secondary currents, and the 60V VDS rating provides adequate margin for 48V nominal rails with typical transient excursions. The SuperSO8 source-down package dissipates 2-3W continuously on 2oz copper without a heatsink, enabling compact quarter-brick and eighth-brick form factors used in central-office telecom equipment.
Recommended
Server 12V Hot-Swap Switch
Hot-swap controllers on 12V server distribution rails require MOSFETs that handle inrush surges and continuous load. The BSC034N06NSATMA1 with 100 A continuous rating and 60V VDS handles 12V rails with substantial transient headroom. Its low RDS(on) reduces DC loss across the eFuse, improving server energy efficiency. The SuperSO8 package is footprint-compatible with standard hot-swap layouts and supports the paralleling required for 200-400 A rack PDUs.
Recommended
E-Mobility Motor Drive
E-bike, e-scooter, and small EV traction motor drives in the 24V-60V battery class use the BSC034N06NSATMA1 in the half-bridge switching stage. Its 100A continuous drain current supports peak motor currents of 150-300 A through paralleling, while OptiMOS 5 technology provides fast switching (low Qgd/Qgs ratio) at PWM frequencies of 20-50 kHz. The SuperSO8 source-down package enables direct PCB cooling, critical in vibration-prone vehicle environments where air cooling is impractical.
Recommended
Lithium-Ion Battery Management Protection
Lithium-ion battery packs at 24V-48V nominal use protection MOSFETs that disconnect the pack on overcurrent or short-circuit. The BSC034N06NSATMA1 serves as the high-side or low-side disconnect switch, with 100A continuous rating covering most e-mobility and small-EV applications. Its low RDS(on) reduces the voltage drop across the protection path during normal operation, extending battery runtime. The 60V VDS rating supports 13s Li-ion packs (54.6V full charge) with adequate transient margin.
Recommended
Synchronous Buck Converter Point-of-Load
Point-of-load synchronous buck converters on 24V intermediate buses use the BSC034N06NSATMA1 as the high-side and low-side FET in the switching stage. Its OptiMOS 5 figure-of-merit enables high-frequency operation (300-500 kHz) with low switching loss, allowing smaller inductors and capacitors. The 60V VDS rating handles 24V industrial bus inputs with substantial derating margin for transients on factory automation power rails.
Recommended
Solar Micro-Inverter Power Stage
Residential solar micro-inverters converting 30-50V panel output use the BSC034N06NSATMA1 in the push-pull primary stage. Its 60V rating matches panel open-circuit voltages at low temperature extremes, while the 3.4 mOhm RDS(on) maximizes inverter efficiency above 97%. OptiMOS 5 technology reduces switching loss at the 50-100 kHz operating frequency typical of micro-inverters, and the SuperSO8 package fits the compact, potted enclosures used for outdoor installations.
Recommended
Recommended Products Summary
Engineering reference data for BSC034N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC027N06LS5ATMA1 | BSC066N06NSATMA1 | BSC0902NSATMA1 | NTTFS006N60 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) - same | PG-TDSON-8-7 (SuperSO8) - same | PG-TDSON-8-7 (SuperSO8) - same | WDFN-8 (3.3x3.3 mm) - similar pin |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | onsemi - cross-brand |
| VDS max | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) max at 10V | 3.4 mOhm | 2.7 mOhm (-21%) | 6.6 mOhm (+94%) | 9.0 mOhm (+165%) | 6.0 mOhm (+76%) |
| Continuous ID at TC=25C | 100 A | [DATA_NEEDED: ID] | [DATA_NEEDED: ID] | [DATA_NEEDED: ID] | [DATA_NEEDED: ID] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi advanced planar |
| Power Dissipation at TC=25C | 74 W | [DATA_NEEDED: PD] | [DATA_NEEDED: PD] | [DATA_NEEDED: PD] | [DATA_NEEDED: PD] |
| Price @ qty 1000 (USD) | $0.65 | [DATA_NEEDED: price] | [DATA_NEEDED: price] | [DATA_NEEDED: price] | [DATA_NEEDED: price] |
Key Differentiators
- Lowest RDS(on) in 60V SuperSO8 family at 3.4 mOhm (vs BSC066N06NSATMA1)
- Higher current rating vs competing WDFN-8 parts (vs NTTFS006N60 (onsemi))
- OptiMOS 5 figure-of-merit enables high-frequency operation (vs BSZ036NE2LSATMA1 (25V OptiMOS 5))
Design Notes
Estimated: at ID=30 A continuous with VGS=10V and RDS(on)=3.4 mOhm, conduction loss is approximately 3.1 W. SuperSO8 (PG-TDSON-8-7) with source-down construction dissipates heat primarily through the PCB copper. Use at least 2oz copper on the source pad with 100-200 mm^2 copper area to keep junction rise below 50C. For continuous currents above 50 A, add thermal vias to inner copper planes.
Place the gate drive trace away from the drain switching node to minimize dv/dt-induced gate coupling. Keep gate loop area under 5x5 mm to control ringing. Use 5-10 ohm gate series resistors; lower values increase EMI, higher values slow switching. Add a 10-100 kOhm gate-source pull-down to prevent inadvertent turn-on in half-bridge topologies during startup or fault conditions.
Do not operate the gate above +/-20 V VGS - the thin gate oxide of OptiMOS 5 is sensitive to overvoltage. Always sequence the gate drive after the source connection is established. When paralleling multiple BSC034N06NSATMA1 devices, use individual gate resistors and matched source Kelvin connections to ensure current sharing; small PCB layout asymmetries otherwise cause thermal runaway.
Use multiple thermal vias (0.3 mm drill, 0.5 mm pitch) under the source pad of PG-TDSON-8-7 to connect top copper to internal ground/power planes. Vias should be filled or capped for improved thermal conductivity. Avoid placing signal traces under the package to maximize continuous copper for heat spreading. Source-down construction requires the top copper to be the primary thermal path.
Compliance Information
RoHS and REACH compliance per Infineon product page; not AEC-Q100 qualified (industrial-grade part); halogen-free status not stated in the verified data.
