BSC035N10NS5ATMA1 vs BSC040N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC035N10NS5ATMA1 by Infineon and BSC040N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC035N10NS5ATMA1 BSC040N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.12 $0.93
Manufacturer Infineon Technologies —
Part Number BSC035N10NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS max) 100 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
On-Resistance (RDS(on) max) 3.5 mOhm —
Power Dissipation (TA=25C) 2.5 W —
Power Dissipation (Tc=25C) 156 W —
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Mounting Type Surface Mount Surface Mount
Configuration Single N-channel MOSFET —
Operating Temperature Range -55C to +150C (junction) -55C to +150C
Gate Drive Logic-level compatible (10V VGS) —
MSL Level [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
RoHS Status Compliant Compliant
Packaging Tape & Reel (T&R) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

Datasheets & Resources

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