BSC035N10NS5ATMA1 vs BSC040N10NS5ATMA1 对比
详细并排对比 BSC035N10NS5ATMA1 出自 Infineon 和 BSC040N10NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC035N10NS5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.12 | $0.93 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC035N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| On-Resistance (RDS(on) max) | 3.5 mOhm | — |
| Power Dissipation (TA=25C) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 156 W | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-channel MOSFET | — |
| 工作温度范围 | -55C to +150C (junction) | -55C to +150C |
| Gate Drive | Logic-level compatible (10V VGS) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| RoHS 状态 | Compliant | Compliant |
| Packaging | Tape & Reel (T&R) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |
| Automotive Qualification | — | AEC-Q101 (per Infineon OptiMOS 5 family) |