BSC040N10NS5ATMA1 vs BSC035N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC040N10NS5ATMA1 by Infineon and BSC035N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC040N10NS5ATMA1 BSC035N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.93 $1.12
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Maximum On-Resistance (RDS(on)) 4 mOhm —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) max 136 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 139 W —
Package PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Capacitance Reduction Up to 44% vs previous generation —
RDS(on) Reduction Up to 43% vs previous generation —
RoHS Status Compliant Compliant
Automotive Qualification AEC-Q101 (per Infineon OptiMOS 5 family) —
Manufacturer — Infineon Technologies
Part Number — BSC035N10NS5ATMA1
Drain-Source Voltage (VDS max) — 100 V
Continuous Drain Current (ID, Tc=25C) — 100 A
On-Resistance (RDS(on) max) — 3.5 mOhm
Power Dissipation (TA=25C) — 2.5 W
Power Dissipation (Tc=25C) — 156 W
Configuration — Single N-channel MOSFET
Gate Drive — Logic-level compatible (10V VGS)
MSL Level — [DATA_NEEDED: MSL rating per JEDEC J-STD-020]
Packaging — Tape & Reel (T&R)

Datasheets & Resources

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