BSC047N08NS3GATMA1 vs BSZ110N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC047N08NS3GATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC047N08NS3GATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 | β |
| Technology | OptiMOSβ’ 3 (N-channel trench) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | 40 A |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V | 11 mΞ© |
| Power Dissition (Tc) | 125 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) | β |
| Avalanche Rated | 100% tested | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | [DATA_NEEDED: operating temperature range] |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | β |
| Part Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Power Dissipation (PD) at Tc | β | 50 W |
| Polarity | β | N-Channel |
| Configuration | β | Single MOSFET |
| Gate Drive Voltage (VGS) | β | [DATA_NEEDED: VGS rating] |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL level] |