BSC0502NSIATMA1 vs BSC0993NDATMA1 Comparison

Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0502NSIATMA1

BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon

BSC0502NSIATMA1 βœ“ Active
Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC0502NSIATMA1 BSC0993NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.85 $1.32
FET Type N-Channel β€”
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TC 100 A β€”
Continuous Drain Current (ID) at TA 26 A β€”
RDS(on) Max at VGS=10V 2.3 mOhm β€”
Gate Charge QG (0V to 4.5V) Typ 9.0 nC β€”
Output Charge QOSS Typ 13.5 nC β€”
Power Dissipation at TA (Ta=25C) 2.5 W β€”
Power Dissipation at TC (Tc=25C) 43 W β€”
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] β€”
Operating Temperature Range -55C to +150C -55C to +150C (junction)
Package PG-TDSON-8 (SuperSO8 5x6) PG-TISON-8
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Series β€” OptiMOS 5 30V
Configuration β€” Dual N-Channel (Array)
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Id) @ Ta β€” 17 A
Channel Mode β€” Enhancement
ESD Protection β€” Yes (integrated)
MSL Level β€” [DATA_NEEDED: MSL level]
Lead-Free β€” Yes
Rds(on) max @ Vgs=10V β€” [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]

Datasheets & Resources

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