BSC050N03LSGATMA1 vs IPD60R380C6ATMA1 Comparison
Detailed side-by-side comparison of BSC050N03LSGATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSC050N03LSGATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC050N03LSGATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 80 A | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | β |
| Channel Type | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) at TC=25C | β | 10.6 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | β | 380 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | β | 83 W |
| Operating Junction Temperature (TJ) | β | -55C to +150C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| FET Type | β | N-Channel |
| Drain-Tab Connection | β | Exposed pad (electrically connected to drain) |