BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC050N03LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.79 | $7.90 |
| 100 | $0.61 | $61.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.42 | $420.00 |
| 5,000 | $0.36 | $1,800.00 |
Drop-in alternatives for BSC050N03LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC050N03LSGXT
✅ Drop-In📋 Reference alternative (not in catalog)
BSC0906NSATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC030N03LSGATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →BSC014N04LSIATMA1
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →BSZ130N03LSGATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →FDMS8027S
✅ Drop-In📋 Reference alternative (not in catalog)
BSC050N03LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at Tc | 80 A |
| Continuous Drain Current (ID) at Ta | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm |
| Power Dissipation (PD) at Tc | 50 W |
| Power Dissipation (PD) at Ta | 2.5 W |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +150 C |
| Channel Type | N-Channel |
| RoHS Status | Compliant |
| MSL Level | 1 |
BSC050N03LSGATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Safe Operating Area (DC)
Typical Applications
BSC050N03LSGATMA1 is suitable for 6 applications: 12V Synchronous Rectifier in Server / Datacom POL, Telecom Brick Module DC-DC Stage, Battery Management Protection FET (12V-24V packs), Hot-Swap / OR-ing FET in Redundant Power, Class-D Audio Amplifier Output Stage, Motor Drive and PWM Switching.
12V Synchronous Rectifier in Server / Datacom POL
The BSC050N03LSGATMA1 is ideally suited to the low-side synchronous-rectifier position in 12 V-input buck converters powering server and datacom point-of-load (POL) rails. Its 5 mOhm maximum RDS(on) at VGS = 10 V minimizes conduction loss at 20-40 A continuous loads, while the OptiMOS 3 trench process delivers low gate and output charge for multi-MHz switching. The SuperSO8 5x6 exposed source pad provides a low-inductance thermal path, allowing the FET to sustain 50 W at case temperature without a heatsink. Compared with older 8-10 mOhm alternatives, the 5 mOhm figure cuts I2R loss by 37-50%, directly improving converter efficiency and reducing thermal stress on neighboring components. Drive the gate with a dedicated 10 V gate-driver IC to stay in full enhancement.
Recommended
Telecom Brick Module DC-DC Stage
In isolated 24 V or 48 V-to-12 V telecom brick modules the BSC050N03LSGATMA1 is well-matched to the secondary-side synchronous-rectifier role where 30 V VDS provides ample margin over the 12 V rectified rail. The 80 A continuous drain-current rating at case temperature handles the high di/dt transients of brick modules delivering 200-400 W, and the 5 mOhm RDS(on) keeps secondary-side conduction loss in check. The SuperSO8 5x6 footprint is the industry-standard secondary-FET package, simplifying layout reuse across product variants. The low Qgd of the OptiMOS 3 process also enables higher switching frequencies, which shrink the output inductor and capacitor count in compact brick designs.
Recommended
Battery Management Protection FET (12V-24V packs)
The BSC050N03LSGATMA1 functions as a low-side battery-protection or hot-swap FET in 12 V-24 V lithium-ion and lead-acid battery packs, where its 30 V VDS rating and 80 A continuous current capability comfortably cover the operating envelope. The 5 mOhm RDS(on) keeps the milliohm-level voltage drop across the FET manageable, preserving system efficiency during high-current discharge. The SuperSO8 5x6 exposed source pad simplifies PCB thermal design because the source tab doubles as the primary heat-spreader. The OptiMOS 3 process is avalanche-rated, which is critical for inductive load switching events in battery systems. Designers should still add a TVS clamp and a proper SOA derating for short-circuit events.
Recommended
Hot-Swap / OR-ing FET in Redundant Power
For OR-ing and hot-swap controller applications in redundant -48 V or 12 V power architectures the BSC050N03LSGATMA1 is well-suited as the series-pass protection FET. The 30 V VDS rating supports 12 V redundant rails with 150% transient headroom, and the 5 mOhm RDS(on) minimizes voltage drop and heat in the always-on path. The 80 A continuous current rating covers most blade-server and storage-system rails. Because the SuperSO8 5x6 footprint is the industry standard for OR-ing FETs, the BSC050N03LSGATMA1 can drop into existing reference designs from major OR-ing-controller vendors. Avalanche ruggedness and a 150 C maximum junction temperature make it tolerant of fault clearing events.
Recommended
Class-D Audio Amplifier Output Stage
The BSC050N03LSGATMA1 is a strong candidate for the output-stage switches of mid-power Class-D audio amplifiers, where its low gate charge and 5 mOhm RDS(on) reduce switching and conduction loss simultaneously. The 30 V VDS rating covers 12 V and 18 V amplifier supply rails, and the 80 A peak current capability handles the high di/dt transitions of audio PWM waveforms. The SuperSO8 5x6 exposed source pad provides the thermal mass needed to absorb continuous audio output power without exceeding the 150 C junction limit. Designers should use a dedicated gate driver and pay attention to dead-time optimization to minimize crossover distortion.
Recommended
Motor Drive and PWM Switching
In low-voltage brushless DC (BLDC) motor drives and high-frequency PWM switching stages the BSC050N03LSGATMA1 delivers the combination of low RDS(on) and low gate charge that motor-control designs demand. The 30 V VDS rating covers 12 V and 24 V motor rails, while the 80 A continuous current capability supports multi-amp motor phases. The SuperSO8 5x6 footprint is widely accepted as the standard low-side FET package for integrated motor-driver modules. The OptiMOS 3 trench process provides fast switching edges that reduce dead-time losses and audible PWM noise. Designers should add a small RC snubber across drain-source to limit voltage overshoot during motor commutation.
Recommended
Recommended Products Summary
Engineering reference data for BSC050N03LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC050N03LSGXT | BSC030N03LSGATMA1 | BSC0906NSATMA1 | FDMS8027S |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | Power56 (5x6 equivalent) |
| VDS Max (V) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current at Tc (A) | 80 A | 80 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) Max at VGS=10V (mOhm) | 5 mOhm | 5 mOhm | 3 mOhm | 9 mOhm (approx) | Similar class |
| Power Dissipation at Tc (W) | 50 W | 50 W | 50 W (class) | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS | Fairchild/onsemi PowerTrench |
| Unit Price (qty 1, USD) | 0.92 | 0.92 | 1.25 | 0.75 | [DATA_NEEDED] |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Best-in-class 5 mOhm RDS(on) in SuperSO8 5x6 for 30 V N-channel (vs BSC0906NSATMA1)
- Lower cost than the 3 mOhm sibling while keeping the same footprint (vs BSC030N03LSGATMA1)
- Avalanche-rated OptiMOS 3 process suitable for OR-ing and hot-swap (vs FDMS8027S)
Design Notes
Estimated: at continuous 40 A load in a SuperSO8 5x6 footprint with RDS(on) of 5 mOhm, conduction loss is approximately 8 W. With 2 oz copper on a 1 sq-inch pad the package theta_JA is in the 40-50 C/W range, producing a 320-400 C/W equivalent junction-temperature rise. A larger copper area or forced-air cooling is required to keep Tj below 150 C; verify with the Infineon SOA curves. The exposed source pad MUST be soldered to the PCB thermal land for rated performance.
Minimize the high-current loop area between the input capacitor, the high-side FET, and the low-side FET to reduce ringing and EMI. Place the gate-drive components within 5 mm of the gate pin to keep the gate-drive loop small, and use a 10-100 ohm gate-drive resistor to control dV/dt. The SuperSO8 5x6 source pins 1-3 and 5-8 should all be soldered to the same source copper pour to share current and thermal dissipation.
Estimated: a 4.5 V gate drive on the BSC050N03LSGATMA1 will increase RDS(on) to roughly 1.5-2x the 10 V value, potentially doubling conduction loss. Always use a dedicated 10 V gate-driver IC. The OptiMOS 3 30 V platform is NOT logic-level compatible. For battery applications, do not rely on RDS(on) alone for short-circuit protection - add a current-sense resistor and a properly-rated fuse or controller.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - automotive designs should use the -AEC1 suffix variant. Lead-free reflow profile per J-STD-020.
