IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
MPN: IPD60R380C6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.87 | $0.87 |
| 10 | $0.78 | $7.80 |
| 100 | $0.66 | $66.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.46 | $460.00 |
| 2,500 | $0.41 | $1,025.00 |
Drop-in alternatives for IPD60R380C6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPD60R380C6ATMA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25C | 10.6 A |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm |
| Power Dissipation (PD) at TC=25C | 83 W |
| Operating Junction Temperature (TJ) | -55C to +150C |
| Technology | CoolMOS C6 Superjunction |
| FET Type | N-Channel |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) |
IPD60R380C6ATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate input; drive with 10 V for full enhancement |
| Pin 2 | Drain — Power drain; electrically tied to exposed back-tab and pin 2 |
| Pin 3 | Source — Power source return |
| Pin Tab | Drain — Exposed drain tab; must be soldered to PCB copper for heatsinking |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPD60R380C6ATMA1 is suitable for 6 applications: Power Factor Correction (PFC) Boost Stage, Switch-Mode Power Supply (SMPS) Primary Switch, Telecom Rectifier and Server Power Supply, Solar Micro-Inverter, Electronic Lighting Ballast, Industrial Motor Drive Half-Bridge.
Power Factor Correction (PFC) Boost Stage
The IPD60R380C6ATMA1 fits PFC boost stages in 1-1.5 kW SMPS because its 600 V drain-source rating provides ample margin above a 400 V rectified DC bus from universal AC input, while the 380 mOhm RDS(on) keeps CCM conduction loss acceptable at 230 V input. The CoolMOS C6 family is engineered specifically for hard-switched CCM PFC, with low gate charge Qg and a fast body diode that handles the boost-inductor demagnetization. Place the part with its drain tab soldered to 1 square inch of 2 oz copper to maintain case temperature below 100 C at full load. Compared with planar 600 V MOSFETs, the superjunction design cuts switching loss by roughly 30%, lifting efficiency into the 80 PLUS Gold range.
Recommended
Switch-Mode Power Supply (SMPS) Primary Switch
Use the IPD60R380C6ATMA1 as the primary-side switch in hard-switched flyback or forward converters up to about 100 W on a 400 V bus. Its 600 V breakdown tolerates inductive kick from the transformer's leakage inductance when paired with an RCD snubber. The 380 mOhm on-resistance suits adapters, set-top-box supplies, and small white-goods SMPS where the converter runs below 65 kHz or above 100 kHz with reasonable duty cycle. Always drive the gate with a 10 V source capable of 1 A peak current to keep switching transitions below 50 ns; a weak driver negates the C6's low Qg advantage and inflates switching loss.
Recommended
Telecom Rectifier and Server Power Supply
The IPD60R380C6ATMA1 is well-matched to 48 V telecom rectifier front-ends operating from a 380 V intermediate bus, where the part serves as the primary switch in a half-bridge or full-bridge topology feeding an isolation transformer. Its superjunction architecture provides lower Eoss than planar 600 V MOSFETs, reducing discharge loss during each switching cycle and improving light-load efficiency needed for 80 PLUS Titanium targets. With 10.6 A continuous current, a single device per switch position handles converters up to roughly 2 kW; parallel two devices for 4 kW rectifiers. Use the IPD60R280P7SAUMA1 as a drop-in upgrade where lower RDS(on) is desired.
Recommended
Solar Micro-Inverter
In single-panel solar micro-inverters up to 600 W, the IPD60R380C6ATMA1 handles the high-frequency primary switch of a DC-DC boost stage that lifts the panel's 25-45 V output to the 380 V DC-link. The 600 V VDS rating provides comfortable margin above the DC-link, and the 380 mOhm RDS(on) at 10 V VGS keeps conduction loss below 1% of rated output at full sun. CoolMOS C6 parts are specified avalanche-energy rated, which protects the device during occasional grid-side transients or load-dump events on the DC bus. Add a TVS clamp across the drain-source to absorb lightning-induced surges on long panel leads.
Recommended
Electronic Lighting Ballast
The IPD60R380C6ATMA1 is a cost-effective choice for electronic ballasts driving fluorescent or HID lamps at 100-300 W, where it operates in a self-oscillating or IC-driven half-bridge at 30-50 kHz. Its 600 V withstand and 380 mOhm on-resistance are well matched to the 400 V rectified mains bus typical of 230 V lighting fixtures. The C6 family was originally designed for this application, so its gate threshold is optimized for direct drive from ballast-driver ICs. Mount the part on 0.5 square inch of copper minimum; in potted ballast assemblies, ensure the potting compound does not thermally insulate the drain tab.
Recommended
Industrial Motor Drive Half-Bridge
For low-voltage three-phase motor drives up to 750 W fed from a rectified 230/400 V bus, the IPD60R380C6ATMA1 forms one leg of a three-phase inverter at switching frequencies of 8-16 kHz. Its 600 V rating handles 230 V rectified bus plus back-EMF transients from the motor windings, and the 10.6 A continuous rating supports motors up to about 1 hp. Use the part with a dedicated gate driver such as the IRS2008STRPBF or 1EDI60N12AFXUMA1 to provide 1 A peak gate current and 2 kV galvanic isolation from the MCU. Add a 100 nF X2 capacitor across the bus and a TVS diode on each phase output for industrial-surge immunity.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R380C6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R385CPATMA1 | IPD60R280P7SAUMA1 | IPD60R450E6 | IPD65R225C7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 650 V |
| RDS(on) max @ VGS=10V | 380 mOhm | 385 mOhm | 280 mOhm | 450 mOhm | 225 mOhm |
| Continuous Drain Current (TC=25C) | 10.6 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25C) | 83 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Family | CoolMOS C6 | CoolMOS P7 | CoolMOS P7 | CoolMOS E6 | CoolMOS C7 |
| Body Diode | Intrinsic fast body diode | Intrinsic fast body diode | Intrinsic fast body diode | Intrinsic body diode | Intrinsic fast body diode |
| Unit Price @ 1000pcs (USD) | 0.46 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- CoolMOS C6 cost-optimized 600V superjunction platform (vs IPD60R385CPATMA1 (CoolMOS P7))
- Lower RDS(on) than the legacy E6 family (vs IPD60R450E6 (CoolMOS E6))
- Higher breakdown margin than standard 600V parts (vs IPD60R280P7SAUMA1 (CoolMOS P7))
Design Notes
Estimated: at VBUS=400 V, ID=2 A average, with switching frequency 100 kHz and duty cycle 0.5, total power dissipation in the IPD60R380C6ATMA1 is approximately P = ID^2 * RDS(on) * duty + 0.5 * VBUS * ID * tr * fsw. For the steady-state portion this is 2^2 * 0.38 * 0.5 = 0.76 W; switching portion with tr=20 ns adds ~0.8 W. Total ~1.5 W on PG-TO252-3 with theta_JA ~62 C/W (1 sq inch 2 oz copper) yields junction rise of ~93 C above 25 C ambient. Provide at least 0.5 square inches of 2 oz copper on the drain tab; for continuous full-load operation above 70 C ambient, upgrade to 1 square inch or attach a small clip-on heatsink.
The exposed drain tab of the IPD60R380C6ATMA1 is electrically live at the drain potential, so the copper pour underneath must not extend under the gate or source traces. Place the gate-drive return trace directly from pin 3 (source) back to the driver IC's ground Kelvin connection - do not share the source trace with power current, as the source inductance otherwise creates a negative feedback that slows turn-off. Route the gate trace as a 4 mm wide track with the driver placed within 10 mm of pin 1; use a 10 ohm gate-source resistor to dampen ringing. Keep the drain-node copper area small to minimize parasitic capacitance that rings with the leakage inductance.
Estimated: ringing frequency for the DPAK switching node is typically f_ring = 1/(2*pi*sqrt(L_para*C_oss)), with L_para around 20 nH and C_oss about 60 pF at 400 V, giving f_ring around 145 MHz. This ringing can exceed 100 V peak on the drain during turn-off and stresses the gate through Miller coupling. Place a ferrite bead or 5-10 ohm resistor in series with the gate to dampen this ringing, and add a 100 pF-1 nF ceramic snubber across drain-source within 5 mm of the device. Do not rely on the gate driver's internal pull-down alone - external gate-source resistor of 10 kohm prevents unwanted turn-on during high dV/dt events.
The most common failure mode for the IPD60R380C6ATMA1 is gate-oxide rupture from VGS spikes exceeding +/-20 V during switching transients. Always place a 10-15 V Zener (e.g., BZX84C12) from gate to source within 5 mm of pin 1, in addition to the gate-source resistor. Second, never operate above the SOA curve at TC=25 C; the DC SOA limit at 600 V is only 0.138 A, so continuous high-VDS operation is forbidden - this part is for switching applications, not linear regulation. Third, observe the body diode reverse-recovery behavior; for continuous CCM operation consider a P7 family part (e.g., IPD60R280P7SAUMA1) for better Qrr.
Compliance Information
RoHS and REACH compliance per Infineon product page. No AEC-Q100 automotive qualification; not recommended for automotive safety-critical applications.
