BSC059N04LS6ATMA1 vs BSC027N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC059N04LS6ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC059N04LS6ATMA1

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 βœ“ Active
Infineon
BSC027N04LSGATMA1

BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC027N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC059N04LS6ATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.54
Technology OptiMOS 6 (N-channel MOSFET) OptiMOS 3 (Trench)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TA=25C 17 A β€”
Continuous Drain Current (ID) at TC=25C 49 A β€”
Pulsed Drain Current (ID,pulse) at TC=25C 59 A β€”
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V β€”
Total Power Dissipation at TA=25C 3 W β€”
Total Power Dissipation at TC=25C 38 W β€”
Gate-Source Voltage (VGS) max +/-20 V Β±20 V
Operating Temperature Range -55C to +150C -55Β°C to +150Β°C
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C β€”
Diode Pulse Current (IS,pulse) 236 A at TC=25C β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 3
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta=25Β°C β€” 24 A
Continuous Drain Current (ID) at Tc=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 2.7 mΞ©
Power Dissipation (Ta=25Β°C) β€” 2.5 W
Power Dissipation (Tc=25Β°C) β€” 83 W
MSL Level β€” 1
Halogen-Free β€” Yes

Datasheets & Resources

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