BSC059N04LS6ATMA1 vs BSC027N04LSGATMA1 比較
詳細並排比較 BSC059N04LS6ATMA1 由 Infineon 與 BSC027N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC059N04LS6ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 6 (N-channel MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | ±20 V |
| 工作溫度範圍 | -55C to +150C | -55°C to +150°C |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| 功率耗散 (TC=25°C) | — | 83 W |
| MSL 等級 | — | 1 |
| 無鹵素 | — | Yes |