BSC059N04LSGATMA1 vs BSC050N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC059N04LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.36 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 73 A | β |
| Continuous Drain Current (ID, Ta=25C) | 16 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | β |
| Power Dissipation (Tc=25C) | 50 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | β |
| Operating Temperature Range | -55 C to +150 C | -55 C to +150 C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| Channel Type | N-Channel | N-Channel |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 80 A |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | β | 5 mOhm |
| Power Dissipation (PD) at Tc | β | 50 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |