BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon
MPN: BSC059N04LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.91 | $0.91 |
| 10 | $0.82 | $8.20 |
| 100 | $0.64 | $64.00 |
| 500 | $0.53 | $265.00 |
| 1,000 | $0.41 | $410.00 |
| 2,000 | $0.39 | $780.00 |
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View Datasheet →BSC059N04LSGATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A |
| Continuous Drain Current (ID, Ta=25C) | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm |
| Power Dissipation (Tc=25C) | 50 W |
| Power Dissipation (Ta=25C) | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) |
| Operating Temperature Range | -55 C to +150 C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| REACH Status | Compliant |
| Channel Type | N-Channel |
BSC059N04LSGATMA1 Pin Configuration
| Pin 1 | Source — Source (connected to thermal pad) |
| Pin 2 | Source — Source (connected to thermal pad) |
| Pin 3 | Source — Source (connected to thermal pad) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source (connected to thermal pad) |
| Pin 6 | Source — Source (connected to thermal pad) |
| Pin 7 | Source — Source (connected to thermal pad) |
| Pin 8 | Source — Source (connected to thermal pad) |
| Pin EP | Source (Thermal Pad) — Exposed source pad for thermal dissipation |
Safe Operating Area - DC
Typical Applications
BSC059N04LSGATMA1 is suitable for 6 applications: 12V Synchronous Rectification in POL Converters, Battery Management and Protection (e-Mobility), OR-ing FET in Redundant Power Architectures, DC Motor Drive Low-Side Switch, Hot-Swap and Inrush Limiting, Power Tool and Portable Equipment Drive.
12V Synchronous Rectification in POL Converters
The BSC059N04LSGATMA1 is well matched to the low-side synchronous rectifier position in 12 V buck and buck-boost point-of-load converters. Its 5.9 mOhm maximum RDS(on) at VGS=10 V keeps conduction loss under 0.6 W at 10 A continuous load, which is critical for meeting 95%+ peak efficiency targets in server and telecom VRMs. The 40 V drain-source rating leaves comfortable margin above 12 V nominal and absorbs ringing from the high-side switching node. With a SuperSO8 footprint the part shares land pattern with many competitors, enabling multi-source qualification.
Recommended
Battery Management and Protection (e-Mobility)
In e-bike, e-scooter and power-tool battery management systems, the BSC059N04LSGATMA1 acts as the high-side or low-side disconnect switch between the pack and the load. Its 73 A continuous case-rated current comfortably handles 20-30 A continuous discharge pulses typical of 36 V and 48 V e-mobility packs, while the 5.9 mOhm RDS(on) minimises the IR-drop across the FET. The 40 V VDS rating covers 10S Li-ion pack voltage with substantial transient margin. OptiMOS 3 trench technology provides the avalanche energy rating needed for inductive loads such as brushed DC motors.
Recommended
OR-ing FET in Redundant Power Architectures
Redundant -48 V or 12 V power systems use OR-ing MOSFETs to isolate failed supply rails while sharing load on healthy rails. The BSC059N04LSGATMA1 fits this role well because its 5.9 mOhm RDS(on) dissipates only about 0.7 W at 11 A per rail, and the 40 V rating handles the 12 V bus plus reverse-bias transients. Source-down SuperSO8 packaging enables direct heatsinking to the system chassis for thermally harsh telecom and datacom deployments. Designers often pair this part with a hot-swap controller to handle inrush and current-share loop compensation.
Recommended
DC Motor Drive Low-Side Switch
In brushed DC motor and solenoid driver stages the BSC059N04LSGATMA1 operates as a low-side switch driven by a gate driver such as the IRS2109STRPBF. Its low RDS(on) keeps the on-state voltage drop well below 0.1 V at typical motor currents, maximising torque efficiency and reducing heat-sinking mass. The 73 A pulse current rating covers motor inrush at startup, and OptiMOS 3 avalanche ruggedness is essential when commutating inductive loads. The 40 V rating suits 12 V and 24 V motor buses used in industrial automation, robotics, and automotive accessories.
Recommended
Hot-Swap and Inrush Limiting
For 12 V and 24 V hot-swap controllers, the BSC059N04LSGATMA1 acts as the series pass element that limits inrush current when a live board is plugged into a powered backplane. Its 5.9 mOhm on-state resistance keeps the steady-state IR-drop to about 60 mV at 10 A, well below the 100 mV budget of most ATX and telecom hot-swap specs. The 73 A case-rated current provides safe operating margin during the SOA-critical inrush transient, and the 40 V rating tolerates ringing from the backplane. Source-down SuperSO8 allows PCB copper spreading for SOA margin.
Recommended
Power Tool and Portable Equipment Drive
Cordless drills, saws, leaf blowers and other 18 V-36 V power tools rely on the BSC059N04LSGATMA1 as the high-current switching element in their brushless DC motor inverter stages. Its low RDS(on) translates directly to longer battery runtime per charge cycle, a critical differentiator in the consumer power-tool market. The 40 V VDS rating is right-sized for 5S to 10S Li-ion packs without overpaying for voltage margin. SuperSO8 packaging keeps the inverter PCB compact while the source-down thermal pad supports 50 W dissipation on copper-spread designs.
Recommended
Recommended Products Summary
Engineering reference data for BSC059N04LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC052N08NS5ATMA1 | BSC066N06NSATMA1 | BSC120N03LSGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) - same | PG-TDSON-8-5 (SuperSO8 5x6 mm) - same | PG-TDSON-8-5 (SuperSO8 5x6 mm) - same | PG-TDSON-8-5 (SuperSO8 5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 60 V | 30 V | 30 V |
| Continuous Drain Current (ID @ Tc=25C) | 73 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max @ VGS=10V | 5.9 mOhm | approximately 5.2 mOhm | approximately 6.6 mOhm | approximately 1.2 mOhm | approximately 3.0 mOhm |
| Technology | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 |
| Power Dissipation (Tc=25C) | 50 W | approximately 50 W | approximately 50 W | approximately 50 W | approximately 50 W |
| RoHS / REACH | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Same SuperSO8 footprint across multiple voltage classes enables single PCB layout reuse (vs BSC066N06NSATMA1)
- OptiMOS 3 technology gives best-in-class FOM in 40V class at this price point (vs BSC027N06LS5ATMA1)
- 73A case-rated continuous current with 2.5W on a minimal FR4 footprint (vs BSZ130N03LSGATMA1)
Design Notes
Estimated: at ID=20A continuous in still air with a 4-layer FR4 PCB and 1 square inch of source-pad copper, the SuperSO8 package will dissipate roughly 20 A x 20 A x 5.9 mOhm = 2.36 W into the source pad. With a typical RthJA of 50 C/W (per Infineon SuperSO8 thermal data) the junction temperature rise above ambient is approximately 118 C, putting Tj near 143 C at 25 C ambient. For continuous currents above 15 A additional copper area, thermal vias, or forced airflow is required. Designers should always cross-check against the manufacturer thermal-impedance curves for the actual board stack-up.
Use a Kelvin-source connection if the part datasheet indicates one (gate-drive return tied to a dedicated source sense pin rather than the power source pad). For the SuperSO8 footprint, place the gate-driver as close as possible to pin 4 and keep the gate loop area under 1 cm² to minimise parasitic inductance and ringing. The exposed source pad must be soldered to a copper pour of at least 1 square inch per ampere of continuous current, with an array of thermal vias (0.3 mm drill, 0.5 mm pitch) connecting the top copper to inner-plane heat-spreading layers.
Do not assume the gate threshold guarantees full enhancement at VGS=4.5 V - the datasheet's RDS(on) spec is given at VGS=10 V, and RDS(on) rises significantly at lower VGS. Do not place a zener clamp from gate to source that exceeds 20 V, as this can damage the thin gate oxide of OptiMOS 3 trench MOSFETs. Always use a gate-drive voltage within the datasheet's recommended 10 V nominal (typically up to 20 V abs max). For low-side switching with the source pad at ground, ensure the gate driver ground returns directly to the source sense pin, not the power ground plane, to avoid ground-bounce-induced MOSFET damage.
Estimated: in a 500 kHz buck converter the switching node dv/dt can reach 5 kV/us, creating displacement currents of roughly Cds x dv/dt. With a SuperSO8 source-down footprint, minimise the switching-node copper area to reduce parasitic capacitance and EMI. Use split ground planes if needed, with the gate-driver ground referenced to the analog ground star-point. Avoid routing the gate trace over the switching node copper; instead route it on the opposite PCB layer to keep the gate-to-drain Miller capacitance low.
Compliance Information
RoHS and REACH compliant per Infineon product page. MSL1 per JEDEC J-STD-020. Automotive AEC-Q101 grade is available on related parts in the same family with the -Q1 suffix - the standard BSC059N04LSGATMA1 is commercial/industrial grade.
