BSC059N04LSGATMA1 vs BSC054N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC059N04LSGATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.42 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | β |
| Continuous Drain Current (ID, Ta=25C) | 16 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | β |
| Power Dissipation (Tc=25C) | 50 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| Channel Type | N-Channel | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC054N04NSGATMA1 |
| Continuous Drain Current (ID) at Tc=25C | β | 81 A |
| Continuous Drain Current (ID) at Ta=25C | β | 17 A |
| On-Resistance RDS(on) max at VGS=10V | β | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation at Tc=25C | β | 57 W |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Gate Drive Voltage (recommended) | β | 10 V |
| Lead-Free Reflow | β | Yes |