BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
MPN: BSC054N04NSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.78 | $78.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.51 | $510.00 |
| 3,000 | $0.42 | $1,260.00 |
Drop-in alternatives for BSC054N04NSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC054N04NSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A |
| Continuous Drain Current (ID) at Ta=25C | 17 A |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation at Tc=25C | 57 W |
| Power Dissipation at Ta=25C | 2.5 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Gate Drive Voltage (recommended) | 10 V |
| Lead-Free Reflow | Yes |
BSC054N04NSGATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (DC)
Typical Applications
BSC054N04NSGATMA1 is suitable for 6 applications: 12V Synchronous Buck POL Converters, 24V Industrial Bus Hot-Swap and OR-ing, Battery Protection and BMS Switch, Low-Voltage Motor Drive H-Bridges, USB-PD and Type-C Sink Power Switch, Telecom 48V Rectifier and DC-DC Stage.
12V Synchronous Buck POL Converters
The BSC054N04NSGATMA1 is widely deployed as the low-side synchronous rectifier in multi-phase 12V point-of-load (POL) buck converters powering FPGAs, ASICs, and server processors. With RDS(on) of 5.4 mOhm at VGS=10V and low gate charge Qg, this MOSFET minimizes both conduction and switching losses, enabling switching frequencies from 300 kHz up to 1 MHz while keeping total FET losses below 2% of output power. The exposed drain pad of the PG-TDSON-8-5 package provides effective heat spreading on standard 4-layer server PCBs. Per Infineon's OptiMOS 3 family datasheet, this part is benchmarked for high-current VR applications.
Recommended
24V Industrial Bus Hot-Swap and OR-ing
In 24V industrial rack and bus systems, the BSC054N04NSGATMA1 serves as a hot-swap or OR-ing FET, where its 40V VDS rating provides ample margin above 24V nominal and 36V transient overvoltages. With continuous ID of 17A at ambient (Ta=25C) and 81A at case, the device can sustain inrush currents during board insertion without tripping upstream breakers. The 5.4 mOhm on-resistance limits steady-state conduction loss to 1.6W at 17A. According to Infineon's OptiMOS 3 family datasheet, the linear-mode operation capability and SOA support hot-swap ramp profiles typical of telecom and industrial Ethernet switches.
Recommended
Battery Protection and BMS Switch
Multi-cell Li-ion battery management systems (BMS) use the BSC054N04NSGATMA1 as a low-side disconnect switch in 4S-10S packs with nominal 12-36V bus voltages. The 40V rating covers fully-charged 10S pack voltages (42V max) with derating margin. The 5.4 mOhm RDS(on) at VGS=10V minimizes discharge-path voltage drop, preserving battery runtime. Per the manufacturer datasheet, the part's low-leakage characteristics and 150C junction temperature rating suit the thermal envelope of sealed battery packs.
Recommended
Low-Voltage Motor Drive H-Bridges
For 12-24V brushed DC and small brushless DC motor drives, the BSC054N04NSGATMA1 is used in H-bridge low-side or high-side positions where 17A continuous Ta and 81A Tc ratings handle motor stall currents up to 50A. The PG-TDSON-8-5 footprint allows compact PCB integration in robotic actuators, e-bike controllers, and drone ESCs. Per Infineon's OptiMOS 3 family datasheet, the trench technology provides robust avalanche capability needed for motor inductive kickback during PWM switching transitions.
Recommended
USB-PD and Type-C Sink Power Switch
Modern USB-PD 3.1 sinks use the BSC054N04NSGATMA1 as the input protection and load switch for 15V-20V-28V negotiated bus voltages. The 40V VDS rating provides headroom above the maximum 28V USB-PD EPR voltage. With 5.4 mOhm on-resistance, conduction loss at 5A PD load is only 0.13W, supporting thermally-constrained laptop and tablet designs. The exposed thermal pad of the PG-TDSON-8-5 package routes heat directly to inner PCB copper layers.
Recommended
Telecom 48V Rectifier and DC-DC Stage
Telecom systems use the BSC054N04NSGATMA1 in the intermediate 40V DC-DC conversion stage between 48V bus and lower-voltage rails. Although rated at 40V, it is commonly used in 36V-38V clamped configurations. The 81A pulsed drain current capability supports paralleled configurations delivering 100A+ aggregate current. According to the manufacturer datasheet, the avalanche rating supports transient protection during hot-swap events on telecom backplanes.
Recommended
Recommended Products Summary
Engineering reference data for BSC054N04NSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC059N04LSGATMA1 | BSC035N04LSGATMA1 | IPD038N06NF2SATMA1 | ISC058N04NM5ATMA1 | NTMFS4841NT1G | IRF8736TRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | SO-8FL - footprint-compatible | PG-TDSON-8 (micro-8) - same family |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 40 V | 30 V |
| RDS(on) max at VGS=10V | 5.4 mOhm | 5.9 mOhm | 3.5 mOhm | 3.8 mOhm | 5.8 mOhm | 5.0 mOhm | 4.1 mOhm |
| Continuous Drain Current (Tc=25C) | 81 A | 76 A | 100 A | 90 A | 78 A | 85 A | 85 A |
| Continuous Drain Current (Ta=25C) | 17 A | 16 A | 20 A | 20 A | 16 A | 18 A | 17 A |
| Technology | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 | OptiMOS 5 | onsemi Trench | StrongIRFET |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Price (qty=1000) | $0.51 | $0.55 | $0.78 | $0.65 | $0.58 | $0.62 | $0.48 |
Key Differentiators
- Lowest RDS(on) in Infineon 40V OptiMOS 3 PG-TDSON-8-5 family (vs BSC059N04LSGATMA1)
- Mature OptiMOS 3 generation with broad distributor stock (vs IPD038N06NF2SATMA1)
- Higher current rating than competing 40V parts (vs IRF8736TRPBF)
Design Notes
Estimated: at 17A continuous drain current in still air, the BSC054N04NSGATMA1 dissipates approximately 1.6W (I^2 x RDS(on) = 17^2 x 0.0054) and requires a copper pad of at least 1 square inch to maintain junction temperature below 100C. For 81A pulsed operation, the case-rated 57W power dissipation demands a thermal pad layout with at least 4-layer 2oz copper pours directly under the exposed drain pad. Without thermal management, junction temperature can exceed 150C and trigger thermal shutdown or device failure.
Minimize source-inductance in the gate-drive loop by placing the gate driver physically within 5 mm of pin 4 (G), and using a wide, short return path on the source pads (pins 1-3). The exposed drain pad should be soldered to a copper pour with a minimum of 6 thermal vias (0.3 mm diameter) connecting to inner ground/power planes. According to Infineon's OptiMOS 3 family datasheet and application notes, parasitic source inductance exceeding 1 nH can cause gate-drive ringing that reduces efficiency and may exceed VGS maximum.
Do not exceed VGS of +/-20V; use a dedicated gate-drive supply of 10V for full enhancement and minimal RDS(on). For half-bridge configurations, add a gate-source resistor (typically 10 kOhm) on each FET to prevent accidental turn-on during the dead-time window when the drain-source voltage dV/dt can capacitively couple to the gate. Verify body-diode reverse recovery performance (Qrr) at the application switching frequency - the BSC054N04NSGATMA1 is optimized for hard-switching topologies.
Switching-node dv/dt on this part can exceed 5 V/ns, requiring careful snubber design in motor-drive and hot-swap applications. Place an RC snubber (typically 4.7 ohm + 1 nF) across the drain-source terminals when the part operates in avalanche mode during turn-off. For EMI-sensitive applications, gate-drive resistors of 10-22 ohm balance switching loss against ringing; lower values increase EMI but reduce switching loss by approximately 15%.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - use automotive-grade OptiMOS variants (BSC... series with -Q1 suffix) for automotive applications. MSL1 rated per JEDEC J-STD-020.
