BSC060P03NS3EGATMA1 vs IRFR5305TRPBF Comparison

Detailed side-by-side comparison of BSC060P03NS3EGATMA1 by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ Active

Specification Comparison

Parameter BSC060P03NS3EGATMA1 IRFR5305TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.32
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (Ta) 17.7 A —
Continuous Drain Current (Tc) 100 A —
On-State Resistance RDS(on) max @ VGS=10V 6 mΩ —
Gate Threshold Voltage VGS(th) typ -2.5 V —
Total Gate Charge Qg @ VGS=10V 81 nC —
Input Capacitance Ciss 6.02 nF —
Output Capacitance Coss 2.81 nF —
Reverse Transfer Capacitance Crss 220 pF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 83 W —
Operating Temperature Range -55°C to +150°C -55 C to +175 C
Package PG-TDSON-8-1 (SuperSO8 5x6) TO-252AA (DPAK)
Technology OptiMOS™ P-channel Trench HEXFET (IR MOSFET)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (Pb-free PBF suffix)
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
MSL Level — 1
Lead-Free Finish — Yes (PBF suffix)

Datasheets & Resources

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