BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
MPN: BSC060P03NS3EGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.66 | $0.66 |
| 10 | $0.58 | $5.80 |
| 100 | $0.49 | $49.00 |
| 500 | $0.42 | $210.00 |
| 1,000 | $0.38 | $380.00 |
Drop-in alternatives for BSC060P03NS3EGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC060P03NS3E-G
✅ Drop-In📋 Reference alternative (not in catalog)
IRF4905STRRPBF
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IRF5305STRRPBF
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →VBQA2305
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR5410TRPBF
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IRFR5305TRPBF
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →BSC060P03NS3EGATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (Ta) | 17.7 A |
| Continuous Drain Current (Tc) | 100 A |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | 81 nC |
| Input Capacitance Ciss | 6.02 nF |
| Output Capacitance Coss | 2.81 nF |
| Reverse Transfer Capacitance Crss | 220 pF |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 83 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Technology | OptiMOS™ P-channel Trench |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
BSC060P03NS3EGATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (DC)
Typical Applications
BSC060P03NS3EGATMA1 is suitable for 6 applications: 12V Automotive Load Switching, Battery Protection and OR-ing, USB Power Switch and Hot-Swap, DC-DC Converter High-Side Switch, Motor Driver H-Bridge (Low-Power), Industrial 24V Bus Switching.
12V Automotive Load Switching
The BSC060P03NS3EGATMA1 is ideal for high-side load switches in 12V automotive systems driving lamps, solenoids, motors, and resistive heaters. Its P-channel polarity allows direct GPIO drive from a 3.3V or 5V microcontroller without a charge pump, dramatically simplifying the gate-drive path versus an N-channel alternative. The 6 mΩ RDS(on) at VGS=10V minimizes conduction loss: at 10A continuous drain current the device dissipates only 0.6W, well within the 2.5W TA rating without a heatsink. The 30V VDS provides comfortable margin above 12V battery transients (load-dump to 35V may require a TVS clamp). Per the Infineon datasheet, the part is qualified to automotive-grade reliability standards and the SuperSO8 5x6 footprint keeps board area minimal in space-constrained ECU designs.
Recommended
Battery Protection and OR-ing
The BSC060P03NS3EGATMA1 functions as a discharge or OR-ing FET in 1S-4S Li-ion battery packs up to 16.8V maximum. The 30V VDS rating provides substantial margin above 4S peak voltages, while the 6 mΩ RDS(on) keeps voltage drop minimal during high-current discharge - at 20A this represents only 120 mV loss, preserving usable battery capacity. The P-channel polarity simplifies the protection circuit: a single low-side N-channel gate driver or comparator output can pull the gate toward ground to enable discharge. Per the Infineon OptiMOS™ datasheet, the part's 81 nC total gate charge allows microsecond-scale turn-off for short-circuit response. The SuperSO8 5x6 package with exposed thermal pad supports the high pulse currents typical of short-circuit events.
Recommended
USB Power Switch and Hot-Swap
The BSC060P03NS3EGATMA1 is well-suited for USB Type-A/C VBUS switches and 5V/12V hot-swap controllers. With 6 mΩ RDS(on) and 30V VDS, it drops negligible voltage at 3-5A USB Type-C loads while providing the inrush control needed for hot-swap applications. The P-channel topology allows the upstream MCU to enable/disable VBUS with a single GPIO, with no charge-pump required. Per the Infineon datasheet, the SuperSO8 5x6 package's exposed thermal pad enables sustained 5A operation with moderate copper pours. The low Qg of 81 nC keeps switching losses minimal for PWM-based current limiting. For higher-current USB-PD applications above 5A, parallel multiple BSC060P03NS3EGATMA1 devices on the PCB.
Recommended
DC-DC Converter High-Side Switch
The BSC060P03NS3EGATMA1 works as the high-side control or synchronous-rectifier FET in 12V-to-low-voltage buck converters, particularly in synchronous topologies where both switches must be P-channel for simplified gate drive. The 6 mΩ RDS(on) keeps conduction loss low: in a 12V-to-3.3V buck at 5A load, dissipation is roughly 0.15W. The 30V VDS comfortably handles 12V nominal and 24V industrial rails with margin for transients. Per the Infineon OptiMOS™ datasheet, the low Qg/Ciss figures enable switching frequencies above 500 kHz. The SuperSO8 5x6 footprint supports tight converter layouts where loop-area minimization is critical for EMI performance.
Recommended
Motor Driver H-Bridge (Low-Power)
The BSC060P03NS3EGATMA1 fits as the high-side switches in low-power brushed DC motor H-bridges for 12V applications such as small actuators, fans, and pumps up to roughly 10A continuous. Two devices form the high-side half of an H-bridge, paired with N-channel low-side FETs. The P-channel high-side topology eliminates the bootstrap capacitors and high-side gate drivers required for N-channel-only H-bridges, simplifying PCB layout. Per the Infineon datasheet, the 100A pulsed current rating handles motor stall and inrush events. The SuperSO8 package's low thermal resistance supports sustained motor currents without external heatsinking.
Recommended
Industrial 24V Bus Switching
The BSC060P03NS3EGATMA1 supports load-switch and power-rail management in 24V industrial automation systems, where the 30V VDS provides the minimum acceptable margin above nominal 24V with limited transient protection. For applications requiring more headroom, consider the 40V or 60V OptiMOS™ P-channel family members, but verify package compatibility. The 6 mΩ RDS(on) makes the part suitable for high-current actuator and solenoid drivers where even small voltage drops matter for system efficiency. Per the Infineon datasheet, the SuperSO8 5x6 footprint is widely accepted in industrial designs and the part's -55°C to +150°C operating range covers extended industrial temperature requirements.
Recommended
Recommended Products Summary
Engineering reference data for BSC060P03NS3EGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC060P03NS3E-G | IRF4905STRRPBF | IRF5305STRRPBF | VBQA2305 | IRFR5410TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi | Infineon |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | D2PAK (TO-263) | D2PAK (TO-263) | PG-TDSON-8-1 (SuperSO8 5x6) | TO-252 (DPAK) |
| VDS max | -30 V | -30 V | -55 V | -55 V | -30 V | -100 V |
| RDS(on) max @ VGS=10V | 6 mΩ | 6 mΩ | 20 mΩ | 90 mΩ | [DATA_NEEDED] | 205 mΩ |
| Continuous ID (Tc) | 100 A | 100 A | 74 A | 31 A | [DATA_NEEDED] | 13 A |
| Total Gate Charge Qg | 81 nC | 81 nC | 120 nC | 63 nC | [DATA_NEEDED] | 130 nC |
| VGS(th) typ | -2.5 V | -2.5 V | -4.0 V | -4.0 V | [DATA_NEEDED] | -4.0 V |
| Power Dissipation (Tc) | 83 W | 83 W | 200 W | 110 W | [DATA_NEEDED] | 79 W |
Key Differentiators
- Best-in-class 6 mΩ RDS(on) in SuperSO8 5x6 P-channel (vs IRF4905STRRPBF)
- Lowest absolute RDS(on) in P-channel class for 30V rating (vs IRF5305STRRPBF)
- P-channel polarity eliminates bootstrap/charge-pump (vs Equivalent N-channel 30V MOSFETs)
Design Notes
At a continuous drain current of 20A with VGS=10V and RDS(on) at junction temperature of ~6 mΩ, the steady-state conduction loss is approximately 2.4W (estimated: 20² × 0.006 = 2.4W). The SuperSO8 5x6 package requires substantial PCB copper on the exposed pad - typically at least 1 square inch of 2oz copper on the top layer - to keep junction temperature within the 150°C maximum. Without adequate copper, thermal resistance rises and the part will thermally limit well below the 100A headline current rating. Always validate thermal performance with a prototype under worst-case load and ambient temperature.
Layout the gate-drive trace as a short, narrow path to minimize parasitic inductance and ringing. Place a 10kΩ gate-source resistor close to the gate pin to prevent floating-gate turn-on during transients. The source pins (1-3) should connect to a wide copper pour that also serves as the heat-spreader. Per Infineon's OptiMOS™ application guidance, vias-in-pad on the exposed thermal pad significantly improve thermal performance. Use multiple vias (typically 4-9) under the pad to conduct heat to inner copper layers.
Do not exceed VGS of ±20V absolute maximum - gate-oxide failure is permanent and silent. When driving the gate from a 5V or 3.3V logic output, ensure the pull-up to source provides fast enough turn-off; slow turn-off causes cross-conduction in half-bridge topologies. The body diode of a P-channel MOSFET conducts in the forward direction (source-to-drain), so check that it does not inadvertently carry sustained current in reverse-polarity protection circuits where a blocking diode is also needed. Finally, verify that the VGS(th) distribution of your specific lot does not cause logic-level drive issues at temperature extremes.
Compliance Information
Infineon OptiMOS™ family is automotive-qualified per AEC-Q101 standards. The 'ATMA1' suffix indicates tape-and-reel packaging for high-volume assembly. RoHS and REACH compliance verified via Infineon product page.
