IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon
MPN: IRFR5305TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.65 | $0.65 |
| 10 | $0.58 | $5.80 |
| 100 | $0.48 | $48.00 |
| 500 | $0.41 | $205.00 |
| 1,000 | $0.36 | $360.00 |
| 3,000 | $0.32 | $960.00 |
Drop-in alternatives for IRFR5305TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR5305PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR5305TRLPBF
β Drop-Inβ In Stock
$0.38 / Unit
View Datasheet βIRFR5305TR
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFR5305TRRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFR5305
β Drop-Inπ Reference alternative (not in catalog)
Slkor IRFR5305
β Drop-Inπ Reference alternative (not in catalog)
XBLW IRFR5305TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR5305TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V |
| Continuous Drain Current (ID) at TC=25C | 31 A |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V |
| Power Dissipation (PD) at TC=25C | 110 W |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ |
| Operating Temperature Range | -55 C to +175 C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (IR MOSFET) |
| MSL Level | 1 |
| RoHS Status | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) |
IRFR5305TRPBF Pin Configuration
| Pin 1 | Gate β Gate drive input; controls conduction between Drain and Source |
| Pin 2 | Drain β Drain terminal; connected to the metal tab, primary current path |
| Pin 3 | Source β Source terminal; reference for gate drive voltage |
| Pin Tab | Drain (Thermal Pad) β Electrically connected to Drain pin; solder to PCB copper for thermal dissipation |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRFR5305TRPBF is suitable for 7 applications: DC Motor Control (H-Bridge High-Side Switch), Solenoid and Valve Driver, Synchronous Rectification in Buck Converters, Battery Protection and Load Switching, Automotive 12V-24V Load Switching, Power OR-ing and Reverse Polarity Protection, LED Driver High-Side Switch.
DC Motor Control (H-Bridge High-Side Switch)
The IRFR5305TRPBF serves as the high-side P-channel switch in H-bridge motor drive circuits for 24V-48V brushed DC motors. Its P-channel polarity eliminates the need for a bootstrap circuit on the high-side, simplifying gate drive to a simple ground-referenced PWM signal from a microcontroller or gate driver. With -55V VDS rating it provides ample headroom above 24V and 48V industrial bus rails, while 65 mOhm RDS(on) at VGS=-10V minimizes conduction losses during PWM switching. The 31A continuous current rating supports motors up to several horsepower without active heatsinking, provided the DPAK tab is soldered to a sufficient copper pour area. Compared to N-channel alternatives, the P-channel topology halves the gate driver complexity in half-bridge configurations.
Recommended
Solenoid and Valve Driver
Industrial solenoid valves, relays, and hydraulic actuators benefit from the IRFR5305TRPBF's fast switching and low on-resistance for energy-efficient PWM control. The -55V drain rating handles the inductive flyback when paired with a freewheeling diode or when using the body diode for non-critical demagnetization paths. The 270 mJ single-pulse avalanche energy rating provides ruggedness against the turn-off voltage spikes generated by 24V solenoids, where stored magnetic energy can exceed the steady-state ratings. Surface-mount DPAK assembly enables compact multi-channel driver boards for process control and factory automation, with the part's -55C to +175C junction temperature range supporting harsh industrial environments.
Recommended
Synchronous Rectification in Buck Converters
In buck converter topologies where a P-channel high-side switch is preferred over N-channel with bootstrap, the IRFR5305TRPBF provides efficient synchronous rectification with low gate charge and fast switching. Its low RDS(on) at VGS=-10V directly reduces conduction losses in 12V and 24V input applications such as point-of-load regulators in telecom and industrial equipment. The P-channel polarity allows the high-side switch to be driven directly from the controller's ground-referenced PWM output without requiring a bootstrap capacitor or level shifter, reducing BOM cost and PCB area. The HEXFET technology's avalanche ruggedness protects the device during abnormal operating conditions.
Recommended
Battery Protection and Load Switching
Battery management systems in portable equipment, e-bikes, and uninterruptible power supplies use the IRFR5305TRPBF as a low-loss load disconnect switch between the battery pack and the load. Its P-channel configuration places the MOSFET in the high-side path, allowing the system ground to remain continuous for the controller, which simplifies fault detection and current sensing. The 65 mOhm RDS(on) minimizes voltage drop across the switch, extending battery runtime by 1-3% compared to higher-resistance alternatives. The -55V rating supports multi-cell lithium packs up to 13S (54.6V fully charged) with adequate transient margin.
Recommended
Automotive 12V-24V Load Switching
Automotive body electronics, lighting drivers, and accessory controls benefit from the IRFR5305TRPBF's robust design and surface-mount DPAK package for compact underhood and interior modules. The -55C to +175C junction temperature range covers automotive cold-crank and underhood thermal extremes, while the 110W power dissipation rating supports sustained loads such as LED headlamp drivers and HVAC actuators. While not itself AEC-Q100 qualified, its design heritage from Infineon's automotive-grade HEXFET process provides field-proven reliability in non-safety-critical body applications where the lower-cost industrial grade is acceptable.
Recommended
Power OR-ing and Reverse Polarity Protection
The IRFR5305TRPBF is well suited to power OR-ing in redundant supply architectures and reverse polarity protection in 24V industrial systems. When used as an OR-ing MOSFET in -48V telecom or +24V industrial battery-backed systems, its low RDS(on) minimizes power dissipation and heat rise. For reverse polarity protection, the P-channel is placed between the input connector and the downstream circuitry, blocking reverse voltage without requiring additional control circuitry - the intrinsic body diode conducts only during the initial connection transient. The -55V rating handles all common 12V, 24V, and 48V nominal bus voltages with substantial transient margin.
Recommended
LED Driver High-Side Switch
LED lighting drivers for architectural, automotive, and signage applications use the IRFR5305TRPBF as the high-side PWM switch for dimming and color mixing control. Its P-channel topology allows direct PWM control from a 3.3V or 5V microcontroller without level shifting, simplifying firmware-driven dimming schemes. The 31A current rating supports LED strings up to several hundred watts when multiple strings are paralleled, while the 65 mOhm RDS(on) keeps conduction losses below 2% even at high PWM currents. The fast switching speed enables PWM dimming frequencies up to 20 kHz without audible noise issues in the LED driver inductors.
Recommended
Recommended Products Summary
Engineering reference data for IRFR5305TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR5305PBF | IRFR5305TRLPBF | IRFR5305 | Slkor IRFR5305 | XBLW IRFR5305TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Slkor | XBLW |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252 (DPAK) - same | TO-252-2L (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS Max | -55 V | -55 V | -55 V | -55 V | -55 V | -60 V |
| Continuous Drain Current (TC=25C) | 31 A | 31 A | 31 A | 31 A | [DATA_NEEDED] | 20 A |
| RDS(on) Max at VGS=-10V | 65 mOhm | 65 mOhm | 65 mOhm | 65 mOhm | approximately 80 mOhm | [DATA_NEEDED] |
| Power Dissipation (TC=25C) | 110 W | 110 W | 110 W | 110 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | HEXFET (IR MOSFET) | HEXFET | HEXFET | HEXFET | Trench MOSFET | Trench MOSFET |
| RoHS Compliant | Yes (PBF suffix) | Yes (PBF suffix) | Yes (PBF suffix) | [DATA_NEEDED] | Yes | Yes |
| Approx. Unit Price (qty 1000) | $0.36 | $0.35 - $0.40 | $0.36 - $0.42 | [DATA_NEEDED] | $0.10 - $0.20 | $0.13 - $0.25 |
Key Differentiators
- Pin-to-pin compatibility with full Infineon IRFR5305 family (vs IRFR5305PBF and IRFR5305TRLPBF)
- Cross-brand cost-down alternatives available (vs Slkor IRFR5305 and XBLW IRFR5305TRPBF)
- Higher continuous current than cross-brand equivalents (vs XBLW IRFR5305TRPBF (20A))
Design Notes
Estimated: At continuous 15A load in still air with a 1 square inch DPAK tab copper pour on a standard 1oz FR-4 PCB, the IRFR5305TRPBF junction-to-ambient thermal resistance (theta_JA) is approximately 50 C/W. Power dissipation P = I^2 x RDS(on) = 15^2 x 0.065 = 14.6W, yielding a junction temperature rise of roughly 730C above 25C ambient - well above the 175C maximum. A larger copper pour (4 square inches) or forced-air cooling is required for sustained high-current operation above 8-10A. Always reference the datasheet SOA curves and thermal resistance table for the final design.
The DPAK (TO-252AA) tab is internally connected to the Drain pin and serves as the primary thermal path. Solder the tab directly to a copper pour with thermal vias connecting to inner planes. Recommended minimum copper area is 1 square inch for moderate loads; 4 square inches or more is recommended for continuous operation above 10A. The Source pin (pin 3) must carry the full load current on the PCB trace, so use wide traces (at least 0.1 inch wide per 5A) on the source side.
Do not confuse the DPAK (TO-252) footprint with the larger D2PAK (TO-263) footprint - the smaller DPAK land pattern cannot reliably accept a D2PAK part and vice versa. When driving inductive loads (motors, solenoids, relays), ensure the VDS spike during turn-off stays below the -55V rating by using a freewheeling diode or snubber. For P-channel gate drive, the gate must be pulled to at least -10V relative to source for full enhancement and lowest RDS(on); a gate voltage of only -5V will leave the MOSFET partially enhanced with much higher on-resistance.
Compliance Information
Pb-free PBF suffix confirms RoHS compliance. Not AEC-Q100 qualified; for AEC-Q100 applications use Infineon automotive-grade alternatives. REACH and conflict minerals status not specified in available data.
