BSC070N10NS5ATMA1 vs ISZ230N10NM6ATMA1 Comparison
Detailed side-by-side comparison of BSC070N10NS5ATMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC070N10NS5ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 80 A | — |
| RDS(on) max @ VGS=10V | 7 mOhm | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissition at TC=25C (Ptot) | 83 W | — |
| Power Dissipation at TA=25C | 2.5 W | — |
| Operating Junction Temperature Range | -55 C to +150 C | — |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Typical Application | Synchronous rectification in SMPS | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 48 W |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| Operating Temperature Range | — | -55 °C to +150 °C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Family | — | OptiMOS 6 (100V class) |