BSC070N10NS5ATMA1 vs ISZ230N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil BSC070N10NS5ATMA1 dari Infineon dan ISZ230N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISZ230N10NM6ATMA1 ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC070N10NS5ATMA1 ISZ230N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TSDSON-8 FL (3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (Ta) — 7.7 A
Continuous Drain Current (Tc) — 31 A
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 48 W
On-Resistance RDS(on) at VGS=10V — 23 mΩ (typ, ID=10A)
Gate Threshold Voltage VGS(th) — 3.3 V (typ at 13 µA)
Rentang Suhu Kerja — -55 °C to +150 °C (junction)
Gate Drive Voltage (recommended) — 10 V
Family — OptiMOS 6 (100V class)

Spek dan Sumber

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