BSC0902NSATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC0902NSATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0902NSATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Operating Temperature Range -55C to +150C (Tj) —
Package PG-TDSON-8-6 (SuperSO8) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Halogen Free Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Part Number — BSC052N08NS5ATMA1
Technology — OptiMOS 5
Continuous Drain Current (ID, Tc) — 95 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.2 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage VGS(th) typ — 2.5-3.0 V
Total Power Dissipation (Tc) — 83 W
Total Power Dissipation (Ta) — 2.5 W
Operating Junction Temperature — -55C to +150C
RoHS Status — Compliant
MSL Level — 1 (unlimited)

Datasheets & Resources

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