BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
MPN: BSC0906NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 5,000 | $0.48 | $2,400.00 |
Drop-in alternatives for BSC0906NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0901NSATMA1
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View Datasheet →BSC0902NSIATMA1
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →BSZ900N20NS3GATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →FDMS8027S
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7749L1TRPBF
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View Datasheet →BSC0906NSATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 18 A |
| Continuous Drain Current (ID) at Tc | 63 A |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 30 W |
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS |
| Operating Temperature Range | -55C to +150C (junction, typical) |
| Pin Count | 8 |
| RoHS Status | Compliant |
BSC0906NSATMA1 Pin Configuration
| Pin 1 | Source (S) — Source terminal, internally connected to thermal pad |
| Pin 2 | Source (S) — Source terminal, internally connected to thermal pad |
| Pin 3 | Source (S) — Source terminal, internally connected to thermal pad |
| Pin 4 | Gate (G) — Gate drive input |
| Pin 5 | Drain (D) — Drain terminal |
| Pin 6 | Drain (D) — Drain terminal |
| Pin 7 | Drain (D) — Drain terminal |
| Pin 8 | Drain (D) — Drain terminal |
Safe Operating Area (DC)
Typical Applications
BSC0906NSATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter, Server and Datacom Point-of-Load (POL) Power, Telecom 12V/24V Hot-Swap and Load Switch, Battery Protection and ORing in Portable Equipment, Industrial 24V Brushless DC Motor Drive, USB-PD and Quick-Charge Buck-Boost Adapter.
12V Synchronous Buck Converter
The BSC0906NSATMA1 serves as the low-side synchronous rectifier in 12V-input, multi-phase buck converters that step down to 1V-5V rails for processors, ASICs, and DDR memory. Its 30V VDS rating comfortably tolerates 12V nominal plus spike margin, while the 63A continuous (Tc) rating covers a single-phase load up to 30-40A in practice. The low Qg minimizes dead-time losses in CCM operation at 300-500 kHz switching frequency, directly boosting light-load and full-load efficiency. Compared with older planar MOSFETs, the OptiMOS 30V typically saves 0.5-1% total efficiency in a multi-phase VR.
Recommended
Server and Datacom Point-of-Load (POL) Power
In server motherboards and datacom switching-fabric cards, the BSC0906NSATMA1 is widely deployed in POL modules that convert 12V intermediate bus to sub-1V core voltages. The SuperSO8 package keeps the PCB footprint small, enabling dense multi-phase VR topologies, while the OptiMOS 30V technology balances conduction and switching losses. Designers benefit from the device's predictable thermal performance on 2-4 oz copper pours, eliminating the need for external heatsinks. Infineon's OptiMOS 30V family is the de facto standard in this segment, meaning multiple sourcing options exist across the same part family.
Recommended
Telecom 12V/24V Hot-Swap and Load Switch
The BSC0906NSATMA1 is well suited for 12V hot-swap controllers and electronic load switches in telecom equipment, where its 30V VDS, 63A pulsed ID, and 2.5W Ta power dissipation handle inrush surges and steady-state load currents reliably. The Infineon SuperSO8 footprint keeps board real-estate minimal compared with TO-220 or DPAK alternatives, allowing dense N+1 redundant power shelves. Designers must still add gate-capacitance control to limit dv/dt-induced turn-on, but the part's predictable Qg makes compensation straightforward.
Recommended
Battery Protection and ORing in Portable Equipment
In high-current battery-pack protection and ORing circuits, the BSC0906NSATMA1 acts as the low-side disconnect MOSFET in 2-4S battery packs for power tools, e-bikes, and portable medical devices. Its 30V rating covers up to 4S Li-ion stacks (16.8V nominal) with margin, and the 63A Tc rating supports continuous discharge currents above 30A with proper copper cooling. The OptiMOS 30V technology minimizes body-diode reverse-recovery loss, reducing stress in synchronous rectification topologies.
Recommended
Industrial 24V Brushless DC Motor Drive
For industrial 24V BLDC motor drives used in robotics, automation, and small EVs, the BSC0906NSATMA1 functions as one of three half-bridge low-side switches. Its 30V VDS rating handles 24V nominal rails plus back-EMF spikes with proper snubbing, while the 63A rating supports multi-amp continuous motor currents with adequate PCB copper. The SuperSO8 package's low package inductance simplifies gate-drive layout and reduces ringing during PWM transitions up to 50 kHz.
Recommended
USB-PD and Quick-Charge Buck-Boost Adapter
In USB-PD and Quick-Charge adapters that step 19-20V down to 5V-12V output at high current, the BSC0906NSATMA1 operates as the synchronous low-side switch in a buck-boost topology. The 30V VDS rating safely covers 20V input plus ringing, and the 63A pulsed rating supports 100W-class adapters with margin. Designers value the device's small footprint and high switching-frequency capability, which enables magnetic-component shrinkage and higher power density in compact adapter enclosures.
Recommended
Recommended Products Summary
Engineering reference data for BSC0906NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSATMA1 | BSC0902NSIATMA1 | BSZ900N20NS3GATMA1 | FDMS8027S | IRF7749L1TRPBF |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8 (SuperSO8 family) - same footprint class | SO-8 Power 56 (5x6 mm) - same | DirectFET L8 / SuperSO8 class - same footprint class |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| VDS (max) | 30 V | 30 V | 30 V | 200 V | 30 V | 40 V |
| Continuous ID at Tc | 63 A | 63 A | 60 A | 44 A | 60 A | 46 A |
| Power Dissipation (Tc) | 30 W | 30 W | 30 W | 29 W | 25 W | 28 W |
| Technology | OptiMOS 30V | OptiMOS 30V | OptiMOS 30V | OptiMOS 200V | onsemi PowerTrench | OptiMOS 40V (DirectFET) |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Pin-to-Pin Compatibility | Reference | Yes - drop-in | Yes - drop-in | Yes - footprint only (VDS mismatch) | Yes - SO-8 Power 56 footprint | Yes - DirectFET/SuperSO8 class |
| Indicative Unit Price (qty 1000) | $0.61 | $0.70 | $0.55 | $1.20 | $0.65 | $1.50 |
Key Differentiators
- Lowest on-resistance in SuperSO8 footprint at 30V rating (vs BSC0901NSATMA1)
- Infineon OptiMOS 30V pedigree with broad second-source availability (vs FDMS8027S (onsemi))
- Tape-and-reel suffix ATMA1 supports high-volume SMT assembly (vs Generic BSZ900N20NS3GATMA1)
Design Notes
The SuperSO8 (PG-TDSON-8-6) package dissipates heat primarily through the exposed source pad, which is internally bonded to source pins 1-3. A minimum 1 square inch of 2 oz copper on the source pads is required to achieve the rated 30W (Tc) dissipation. For continuous currents above 20A, add thermal vias to inner-layer copper planes to spread heat vertically. Estimated: with 1 square inch of 2 oz copper on a 1.6 mm FR-4 board, theta_JA is approximately 50 C/W; at 2W dissipation the junction rises 100 C above 25 C ambient, so reduce ID or add cooling for sustained high-current operation.
Place the gate drive loop (gate resistor, gate driver output, gate-source capacitance) as short and compact as possible to minimize parasitic inductance that causes ringing and dv/dt-induced false turn-on. Keep the source-return of the gate-driver IC tied to the same source copper pour as pins 1-3 of the MOSFET; a Kelvin connection to the gate driver is mandatory above 100 kHz switching frequency. Add a 10 kohm gate-source pull-down resistor to hold the MOSFET off during controller startup.
Do not exceed VGS = +/-20V; the BSC0906NSATMA1's gate oxide is rated for 20V maximum, and standard 12V gate-drive signals are well within range but a 24V gate-drive failure can destroy the part. Verify that body-diode reverse-recovery is acceptable in your dead-time window - OptiMOS 30V has very low Qrr, but excessive dead time still wastes efficiency. For paralleling multiple BSC0906NSATMA1 devices, de-rate current to 70% per device to compensate for unmatched on-resistance and thermal gradients.
Route the high-di/dt power loop (input cap positive -> high-side drain -> low-side source -> input cap negative) on adjacent PCB layers to minimize parasitic inductance. This loop area directly determines switching spike amplitude and switching loss. Use 1 oz copper minimum for 10A+ continuous paths and 2 oz copper for 30A+ paths. Place the input ceramic bypass capacitor (1-10 uF X7R) within 5 mm of the drain-source switching node.
Compliance Information
RoHS compliant per Infineon product page (suffix ATMA1 confirms lead-free). Halogen-free per Infineon OptiMOS product family declaration. Not AEC-Q100 qualified; choose AEC-Q variants such as IAUC100N04S6L025ATMA1 for automotive applications.
