BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC030N03LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.74 | $7.40 |
| 100 | $0.61 | $61.00 |
| 500 | $0.52 | $260.00 |
| 1,000 | $0.45 | $450.00 |
| 3,000 | $0.38 | $1,140.00 |
Drop-in alternatives for BSC030N03LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC030N03LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | 23 A |
| RDS(on) Max @ VGS=10V | 3 mOhm |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC |
| Output Charge (Qoss) | 66 pF |
| Input Capacitance (Ciss) Typ | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | 69 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Avalanche Rated | Yes (100% tested) |
BSC030N03LSGATMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input |
| Pin 2 | S — Source (bonded to pins 3, 4, 5, 6, 7 internally) |
| Pin 3 | S — Source (bonded internally) |
| Pin 4 | S — Source (bonded internally) |
| Pin 5 | S — Source (bonded internally) |
| Pin 6 | S — Source (bonded internally) |
| Pin 7 | S — Source (bonded internally) |
| Pin 8 | D — Drain |
Safe Operating Area (DC, Tc=25C)
Typical Applications
BSC030N03LSGATMA1 is suitable for 6 applications: 12V Synchronous Rectifier in Server VRM, Telecom Brick DC-DC Converter High-Side Switch, 12V Hot-Swap and OR-ing in Distributed Systems, 24V Industrial Motor Drive H-Bridge, Battery Protection in 12V Li-Ion Packs, Point-of-Load (PoL) Buck Converter in Networking Switches.
12V Synchronous Rectifier in Server VRM
The BSC030N03LSGATMA1 fits the low-side synchronous-rectifier position of a 12 V-input buck converter powering server CPUs and DDR memory rails. Its 3 mOhm RDS(on) at VGS=10 V keeps conduction loss below 1 W at 25 A output, while the 55 nC Qg enables switching frequencies up to 500 kHz without driver loss penalties. Placed as the low-side switch with a companion high-side 30 V MOSFET, it achieves >96 % efficiency in 12 V-to-1.8 V multiphase VRMs common in hyperscale datacenters. The PG-TDSON-8-1 footprint matches industry-standard SuperSO8 land patterns, so existing server VRM designs can drop it in without re-laying the board.
Recommended
Telecom Brick DC-DC Converter High-Side Switch
In 36-75 V telecom brick converters with an intermediate 12 V or 24 V bus, the BSC030N03LSGATMA1 sits on the secondary-side high-current rails. The 100 A continuous current and 3 mOhm RDS(on) make it ideal for OR-ing between parallel converter modules. Its 30 V rating comfortably handles 12 V rails with the 10-15 V transient envelope typical of PoL stages. Compared with older planar MOSFETs, the OptiMOS 3 trench process cuts switching loss by approximately 30 %, allowing higher converter density in compact telecom bricks while keeping junction temperatures within the 150 C maximum rating.
Recommended
12V Hot-Swap and OR-ing in Distributed Systems
The BSC030N03LSGATMA1 serves as the main pass-MOSFET in 12 V hot-swap controllers protecting server backplanes and telecom line cards. Its 100 A pulsed current handling covers inrush transients when bulk output capacitors charge at board insertion, while the 3 mOhm on-resistance keeps the steady-state voltage drop below 100 mV at 30 A. Designers use it with hot-swap controllers such as the LM5069 or LTC4215 to implement foldback current limiting, inrush dV/dt control, and circuit-breaker functionality. The 30 V rating provides margin for inductive kick-back in backplane wiring, and the exposed thermal pad dissipates 69 W at Tc=25 C for short-duration fault events.
Recommended
24V Industrial Motor Drive H-Bridge
In 24 V industrial motor-drive H-bridges driving brushed or small BLDC motors, the BSC030N03LSGATMA1 functions as both the high-side and low-side switch thanks to its symmetric package and 100 A rating. The 30 V Vds provides ample margin above the 24 V nominal bus with regenerative brake transients, while the 3 mOhm RDS(on) minimizes conduction loss during PWM operation at 20-50 kHz. The exposed SuperSO8 thermal pad couples directly to a heatsink or large copper pour, sustaining continuous motor currents of 15-20 A without thermal throttling. This is a typical application in factory automation, robotics, and small electric vehicle traction.
Recommended
Battery Protection in 12V Li-Ion Packs
The BSC030N03LSGATMA1 can serve as the discharge FET in multi-cell 12 V Li-ion battery packs, where its 3 mOhm on-resistance minimizes IR drop across the power path and preserves battery run-time. Its 100 A continuous current rating easily handles high inrush from inverters and motor starters, while the 30 V Vds withstands transient overvoltages during load dumps. The avalanche rating is critical here because inductive loads can force drain voltages well above the steady-state battery voltage during switch-off events. Place a Zener clamp across gate-source for enhanced ESD immunity during manufacturing.
Recommended
Point-of-Load (PoL) Buck Converter in Networking Switches
Networking switches and routers rely on dense PoL converters stepping 12 V down to 1.0 V, 1.2 V, 1.5 V, and 3.3 V rails for ASICs, FPGAs, and switch-fabric chips. The BSC030N03LSGATMA1 fits the synchronous-rectifier slot in these converters because its 3 mOhm RDS(on) at VGS=10 V and 55 nC Qg deliver high efficiency at 500-800 kHz switching. The PG-TDSON-8-1 5x6 mm footprint enables compact PCB layouts critical for high-density port cards. Designers commonly pair it with a half-bridge driver such as the IRF7749L1TRPBF to achieve >93 % peak efficiency even at the lowest duty cycles demanded by 1.0 V core rails.
Recommended
Recommended Products Summary
Engineering reference data for BSC030N03LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC019N04NSGATMA1 | BSC076N06NS3GATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| Vds Max (V) | 30 V | 30 V | 30 V | 40 V | 60 V | 80 V |
| RDS(on) Max @ VGS=10V | 3 mOhm | 9 mOhm | 9.6 mOhm | 1.9 mOhm | 7.6 mOhm | 5.2 mOhm |
| Continuous Id @ Tc=25C | 100 A | 50 A | 46 A | 120 A | 85 A | 95 A |
| Gate Charge Qg Typ (nC) | 55 nC | 29 nC | 27 nC | 85 nC | 44 nC | 60 nC |
| Technology | OptiMOS 3 (30 V) | OptiMOS 3 (30 V) | OptiMOS 3 (30 V) | OptiMOS 5 (40 V) | OptiMOS 3 (60 V) | OptiMOS 5 (80 V) |
| Power Dissipation @ Tc (W) | 69 W | 45 W | 45 W | 78 W | 69 W | 78 W |
| 1k pcs Price (USD, as of 2026-09-13) | $0.45 | $0.30 | $0.28 | $0.62 | $0.42 | $0.55 |
Key Differentiators
- Lowest RDS(on) in PG-TDSON-8-1 30V class (vs BSC0901NSATMA1)
- Higher voltage margin for 12V OR-ing applications (vs BSC019N04NSGATMA1)
- Higher current and Pd vs 60V/80V siblings (vs BSC076N06NS3GATMA1 (60V) and BSC052N08NS5ATMA1 (80V))
Design Notes
Estimated: at Pd=3 W continuous in the PG-TDSON-8-1 package (theta_JA ~ 50 C/W on 1 sq inch copper), the junction temperature rise is roughly 150 C above ambient. Real designs must place thermal vias under the exposed pad and connect them to a 2-oz inner-plane copper pour. Without adequate heatsinking, the 69 W Tc=25 C rating gives a false sense of capability - thermal design hinges on PCB layout, not just the part number.
Keep the gate-drive loop area as small as possible. Place the gate-driver IC within 5 mm of pin 1 (G), and use a 10-100 ohm gate resistor to damp the miller plateau oscillation. The Source pins (2-7) should be tied to a wide ground-return copper pour that doubles as a thermal path. Following Infineon SuperSO8 layout guidelines minimizes parasitic inductance and prevents false turn-on from Cdv/dt-induced miller coupling.
Do not exceed Vgs=20 V absolute maximum - the gate oxide is thin and ESD-sensitive. Add a 10 kohm gate-source pull-down resistor to keep the part off during controller start-up transients. In half-bridge configurations, the dead-time between high-side and low-side switches must be long enough to prevent shoot-through but short enough to minimize body-diode conduction loss. A typical value is 30-50 ns for 500 kHz operation.
Estimated: switching transients at 50 A and 30 V can produce dV/dt above 5 kV/us. The parasitic Cds capacitance couples this into the gate-source path; a gate-source capacitor of 1-10 nF can slow the dv/dt below the miller-induced turn-on threshold. Always validate by probing the gate waveform with a low-inductance ground spring during EMC pre-compliance testing - a snubber network (RC across drain-source) may be necessary to meet CISPR 22 Class B.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per datasheet. AEC-Q100 qualification is not applicable for this industrial-grade part - refer to automotive-grade OptiMOS variants for AEC-Q100-qualified equivalents.
