BSC097N06NSATMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC097N06NSATMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC097N06NSATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 46 A | β |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | 9.7 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 36 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package / Case | PG-TDSON-8-6 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | 1 |
| Avalanche Rated | Yes (EAS per datasheet) | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max] |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6) |
| Shipping Packaging | β | Tape & Reel (T/R) |