BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSC098N10NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.15 | $11.50 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
| 5,000 | $0.55 | $2,750.00 |
Drop-in alternatives for BSC098N10NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC098N10NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm |
| Power Dissipation (Tc=25C) | 69 W |
| Power Dissipation (Ta) | 2.5 W |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Shipping Packaging | Tape & Reel (T/R) |
BSC098N10NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source power terminal (paralleled with pins 2, 3, 7, 8) |
| Pin 2 | Source — Source power terminal |
| Pin 3 | Source — Source power terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source Sense (Kelvin) — Kelvin source reference for gate drive return |
| Pin 6 | Drain — Drain power terminal (paralleled with exposed pad) |
| Pin 7 | Drain — Drain power terminal |
| Pin 8 | Drain — Drain power terminal |
Safe Operating Area (estimated based on 69W Tc dissipation limit)
Typical Applications
BSC098N10NS5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Secondary-Side Rectification in Isolated DC-DC, Industrial 24V/36V Motor Drive Half-Bridge, Solar MPPT / Battery Management Hot-Swap, USB-PD and High-Wattage Adapter Synchronous Buck, Automotive 48V Mild-Hybrid DC-DC.
48V Telecom Synchronous Rectification
The BSC098N10NS5ATMA1's 100 V VDS rating and 9.8 mOhm maximum on-resistance make it ideal for synchronous-rectifier MOSFETs in 48V-input step-down converters feeding telecom and datacom loads such as 12V or 5V intermediate bus converters. In a half-bridge topology the low-side FET conducts the bulk of the inductor current during freewheeling; placing this part on the low-side with a 10 V gate drive realizes the rated 9.8 mOhm RDS(on), cutting conduction loss by 43% versus the prior generation. Combined with a high-side partner FET (e.g. BSC027N10NS5ATMA1 for further loss reduction) the converter can reach 97%+ peak efficiency at 200-500 kHz switching frequency, where the 44% lower Coss of OptiMOS 5 directly reduces switching dead-time losses.
Recommended
Secondary-Side Rectification in Isolated DC-DC
BSC098N10NS5ATMA1 is well suited as a synchronous rectifier on the secondary side of isolated full-bridge or forward converters in server and industrial brick supplies. The 60 A continuous rating handles the bulk output current at 12V/20A or 5V/40A rails, while the 100V breakdown covers 24V/48V nominal inputs with margin. Its 0.9 V typical body-diode forward voltage and soft reverse recovery lower dead-time induced circulating losses in self-driven synchronous-rectifier topologies. Use a dedicated SR controller or a gate-drive transformer referenced to the FET's source-sense pin (pin 5 of SuperSO8) for clean timing and to maximize efficiency.
Recommended
Industrial 24V/36V Motor Drive Half-Bridge
For 24V/36V industrial motor-drive half-bridges and brushed/brushless DC motor inverters, the BSC098N10NS5ATMA1's 100V breakdown gives ample headroom for back-EMF spikes from inductive loads, while its 60A rating handles peak motor currents up to several kW. The 69 W (Tc) power dissipation capability with a properly copper-clad PCB allows sustained operation without an external heatsink in compact drive modules. Use the SuperSO8 5x6's source-sense pin (pin 5) as a true Kelvin gate return to prevent source-inductance-induced gate-drive ringing and shoot-through at high dV/dt.
Recommended
Solar MPPT / Battery Management Hot-Swap
BSC098N10NS5ATMA1 is frequently used as the high-side hot-swap / OR-ing FET in 24V/48V solar MPPT chargers and battery-management systems where its 100V rating tolerates PV open-circuit voltage spikes and its low RDS(on) minimizes I^2R loss across the conduction path. The 240A pulsed diode current rating gives a generous safety margin for inrush events during battery insertion. Drive the gate with a dedicated hot-swap controller that performs inrush current limiting and over-current protection, using the SuperSO8 5x6's thermal pad to spread heat into the host PCB copper.
Recommended
USB-PD and High-Wattage Adapter Synchronous Buck
In USB-Power-Delivery and 60-100 W adapter buck stages converting 19V/20V from a PFC front-end to 5V/9V/12V/15V/20V outputs, the BSC098N10NS5ATMA1 serves as a robust low-side synchronous rectifier. The 100V rating is overkill for the 20V output rail but provides safety margin against transformer leakage-induced overshoot and is shared with the high-side FET in the same half-bridge. Its low RDS(on) reduces heat dissipation, enabling adapter designs to meet 30 W/in^3 power-density targets without paralleling MOSFETs.
Recommended
Automotive 48V Mild-Hybrid DC-DC
BSC098N10NS5ATMA1 is commonly designed into 48V mild-hybrid buck and boost converters in automotive power-electronics platforms where its 100V breakdown tolerates 48V bus transients under load-dump conditions and its low RDS(on) supports >3 kW power levels in a single FET. The Infineon OptiMOS 5 family is qualified for automotive use (look for Infineon's Q-graded variants in adjacent part numbers). Use a dedicated automotive gate driver (e.g. 1EDI20N12AFXUMA1 or TLE94003EPXUMA1) for reinforced isolation and ASIL-aware fault handling.
Recommended
Recommended Products Summary
Engineering reference data for BSC098N10NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC070N10NS5ATMA1 | BSC097N06NSATMA1 | BSC027N10NS5ATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| VDS max | 100 V | 100 V | 60 V | 100 V | 150 V |
| RDS(on) max @ VGS=10V | 9.8 mOhm | 7.0 mOhm | [DATA_NEEDED] | 2.7 mOhm | [DATA_NEEDED] |
| Continuous Drain Current (ID, Tc=25C) | 60 A | 70 A (typ) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
| Power Dissipation (Tc) | 69 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Unit Price @ qty 1 (USD, as of 2026-09-14) | 1.42 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- OptiMOS 5 generation gives 43% lower RDS(on) and 44% lower Coss vs prior generation (vs BSC360N15NS3GATMA1 (OptiMOS 3 generation))
- Lower RDS(on) at same VDS rating in same footprint (vs BSC070N10NS5ATMA1 (same family, 7.0 mOhm))
- Higher VDS headroom than 60V-class OptiMOS 5 (vs BSC097N06NSATMA1 (60V))
Design Notes
Estimated: at ID=30 A continuous the BSC098N10NS5ATMA1 dissipates I^2R = 30^2 * 0.0098 = ~8.8 W. With the SuperSO8 5x6 thermal pad reflowed onto 1 oz copper over ~1 square inch, theta_JA is roughly 50 C/W, yielding a Tj rise of ~440 C above 25 C ambient - clearly beyond the 150 C limit, so active cooling or substantial copper heatsinking (>= 2 sq-in per FET) is required. Always use the central source-sense pin (pin 5) as the gate-driver return to avoid gate-rive oscillation in high-dI/dt loops.
Lay out the high-di/dt loop (input decoupling cap, high-side FET drain-source, low-side FET drain-source, back to input cap) as small and physically tight as possible; this minimizes parasitic inductance L*di/dt-induced voltage overshoot on the FET drain. Place the gate-drive loop (driver output, gate, source-sense, back to driver ground) orthogonal and physically separated from the power loop to avoid capacitive coupling that can re-trigger the gate.
Estimated: per Infineon's RthJC = ~1.5 C/W for SuperSO8 5x6, sustained 69 W at Tc=25 C implies Tj=130 C; at Tc=100 C operation the part can still dissipate ~38 W safely. Derate linearly to ~50% of rated ID when Tj is allowed to approach 125 C, as the RDS(on) increases ~1.4x from 25 C to 125 C and reduces safe operating area. Use thermal vias under the exposed pad (>= 9 x 0.3 mm vias filled with copper) to spread heat into inner copper layers.
Do not assume VGS(th) of 2-3 V is sufficient for full enhancement; the BSC098N10NS5ATMA1 specifies RDS(on) only at VGS=10 V and the RDS(on) at 4.5 V VGS can be 1.5-2x higher, leading to unexpected conduction loss in 5 V-driven synchronous-rectifier designs. Always drive the gate to >= 8 V for production designs. Avoid paralleling multiple FETs without individual source-sense gate resistors to prevent circulating current between mismatched RDS(on) devices.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard part is not AEC-Q100 qualified; contact Infineon for automotive-grade (Q-) variants if needed. Halogen-free status not explicitly listed in the verified web data.
