BSC097N06NSATMA1 vs BSC098N10NS5ATMA1 비교

다음의 상세 나란히 비교: BSC097N06NSATMA1 제조: Infineon 및 BSC098N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC097N06NSATMA1 BSC098N10NS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.38 $0.55
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
동작 접합 온도 -55C to +150C —
패키지 / 케이스 PG-TDSON-8-6 (SuperSO8 5x6 mm) —
실장 유형 Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 5 (N-channel trench MOSFET)
RoHS 상태 Compliant Compliant
MSL 레벨 1 (Unlimited) 1
Avalanche Rated Yes (EAS per datasheet) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25C) — 60 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc=25C) — 69 W
Power Dissipation (Ta) — 2.5 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
동작 온도 범위 — [DATA_NEEDED: Tj min/max]
패키지 — PG-TDSON-8-7 (SuperSO8 5x6)
Shipping Packaging — Tape & Reel (T/R)

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