BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
MPN: BSC097N06NSATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.58 | $1.58 |
| 10 | $0.83 | $8.30 |
| 100 | $0.58 | $58.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.38 | $380.00 |
Drop-in alternatives for BSC097N06NSATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC090N06NS
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSC072N06NS5
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSC0993NDATMA1
β Drop-Inβ In Stock
$1.32 / Unit
View Datasheet βBSC034N06NSATMA1
β Drop-Inβ In Stock
$0.65 / Unit
View Datasheet βSiR626DP-T1-GE3
β Drop-Inπ Reference alternative (not in catalog)
NTMFS4C029N
β Drop-Inπ Reference alternative (not in catalog)
BSC097N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Part Status | Active |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 46 A |
| RDS(on) max at VGS=10 V | 9.7 mOhm |
| Power Dissipation at Ta=25C | 2.5 W |
| Power Dissipation at Tc=25C | 36 W |
| Operating Junction Temperature | -55C to +150C |
| Package / Case | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 (Trench) |
| RoHS Status | Compliant |
| MSL Level | 1 (Unlimited) |
| Avalanche Rated | Yes (EAS per datasheet) |
BSC097N06NSATMA1 Pin Configuration
| Pin 1 | S β Source |
| Pin 2 | S β Source |
| Pin 3 | S β Source |
| Pin 4 | G β Gate |
| Pin 5 | D β Drain |
| Pin 6 | D β Drain |
| Pin 7 | D β Drain |
| Pin 8 | D β Drain |
| Pin PAD | D β Drain (exposed thermal pad on underside of package) |
Safe Operating Area (DC)
Typical Applications
BSC097N06NSATMA1 is suitable for 7 applications: 48 V Telecom / Datacom Synchronous Rectifier, E-Bike / Small-EV Motor Drive Half-Bridge, Hot-Swap / OR-ing Controller in Server CRPS Rails, Class-D Audio Amplifier Output Stage, Solar Microinverter / MPPT Stage, Battery Protection (BMS) for 12-48 V Li-ion Packs, USB-PD / Wall-Adapter Synchronous Flyback Rectifier.
48 V Telecom / Datacom Synchronous Rectifier
The BSC097N06NSATMA1 is widely used as the low-side synchronous rectifier in 48 V to point-of-load DC-DC converters for telecom and hyperscale datacom systems. Its 9.7 mOhm max RDS(on) at VGS=10 V and 46 A continuous drain current minimize conduction loss at the high secondary-side currents typical of 48 V bus architectures, while the SuperSO8 package exposes the drain directly to top-side or bottom-side copper for direct cooling through the PCB. Designers pair it with a primary-side 100 V or 150 V switch and a digital or analog controller such as the Infineon XDPL8219, achieving peak efficiencies above 96% in 48 V to 12 V isolated brick converters. The OptiMOS 5 trench technology keeps gate charge low enough to operate at 100-200 kHz without driving loss dominating the budget.
Recommended
E-Bike / Small-EV Motor Drive Half-Bridge
In e-bike controller and small-EV inverter designs, the BSC097N06NSATMA1 serves as a half-bridge switch in a 3-phase MOSFET inverter. With 60 V VDS headroom above the 36-48 V battery rail and 46 A continuous ID, it comfortably delivers the 15-25 A phase currents required for 250-750 W motors while leaving thermal margin for the harsh under-seat environment. The SuperSO8 footprint allows direct migration to Infineon automotive-grade parts such as the IAUC60N06S5L073ATMA1 for OEM automotive variants. The OptiMOS 5 cell geometry also reduces switching loss versus older OptiMOS 3 designs, which directly extends battery range per charge by 3-5%.
Recommended
Hot-Swap / OR-ing Controller in Server CRPS Rails
Server Common Redundant Power Supply (CRPS) rails use the BSC097N06NSATMA1 as the OR-ing MOSFET on the 12 V output bus to prevent reverse current flow between paralleled supplies during failover. Its 9.7 mOhm RDS(on) adds minimal voltage drop at full 40 A load, while the 60 V rating provides ample margin against inductive kickback during hot-plug events. The device's avalanche-rated body diode also survives brief short-circuit transients that occur when a failed supply is disconnected. Pair the part with a hot-swap controller such as the Infineon BTS700201ESPXUMA2 to form a complete protection island per supply output.
Recommended
Class-D Audio Amplifier Output Stage
The BSC097N06NSATMA1 is a popular choice for the half-bridge output stage of mid-power Class-D audio amplifiers driving subwoofers and PA systems. Its low 9.7 mOhm RDS(on) and 46 A current rating handle continuous output currents of 200-500 W amplifiers without overheating, while the fast switching transition preserves audio fidelity and keeps EMI within FCC Class B limits. The SuperSO8 package also offers superior thermal performance over the standard SO-8, allowing direct PCB heatsinking via copper pours. Place a 10-100 ohm gate resistor in series with each MOSFET to dampen parasitic ringing from the gate-to-drain (Miller) capacitance during PWM transitions.
Recommended
Solar Microinverter / MPPT Stage
In sub-300 W solar microinverters and MPPT charge controllers, the BSC097N06NSATMA1 is deployed as the main switch on the low-voltage battery side or in the synchronous rectification stage of an isolated push-pull topology. Its 60 V VDS handles 24 V battery systems plus transient spikes, and the 9.7 mOhm RDS(on) preserves the 96-98% peak efficiency required for residential solar installations. The OptiMOS 5 cell structure also handles the body-diode reverse-recovery stress of CCM operation without requiring additional snubber circuits. Pair the MOSFET with a digital MPPT controller such as the Infineon TLE94003EPXUMA1 to implement perturb-and-observe algorithms with sub-millisecond tracking response.
Recommended
Battery Protection (BMS) for 12-48 V Li-ion Packs
The BSC097N06NSATMA1 is deployed as the discharge FET in 12-48 V lithium-ion battery management systems (BMS) where it must survive occasional short-circuit events. Its 60 V VDS comfortably exceeds the 58 V ceiling of a 13S Li-ion pack, and the avalanche-rated body diode absorbs the inductive energy of the load when the BMS disconnects during a fault. The 9.7 mOhm RDS(on) keeps voltage drop at full 40 A discharge under 400 mV, which is critical to maximize the usable capacity of high-current e-mobility packs. Place the part in a back-to-back common-source configuration with a second BSC097N06NSATMA1 to provide bidirectional switching and true reverse-current blocking.
Recommended
USB-PD / Wall-Adapter Synchronous Flyback Rectifier
In 65-100 W USB Power Delivery wall adapters, the BSC097N06NSATMA1 operates as the secondary-side synchronous rectifier on a 24 V or 30 V output rail. Its 60 V VDS rating accommodates the secondary ringing typical of QR/ACF flyback topologies, and the 9.7 mOhm RDS(on) keeps full-load efficiency above 94% while remaining compatible with quasi-resonant controllers. The OptiMOS 5 family also has low Qrr which reduces dead-time loss and improves light-load efficiency - critical for meeting EU CoC Tier 2 no-load standby targets. Pair with a digital flyback controller such as the XDPL8219XUMA1 for adaptive ACF operation.
Recommended
Recommended Products Summary
Engineering reference data for BSC097N06NSATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC090N06NS | BSC072N06NS5 | BSC0993NDATMA1 | SiR626DP-T1-GE3 | NTMFS4C029N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | onsemi |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | Power-SO8 (compatible) | SO-8FL (compatible) |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | 60 V | [DATA_NEEDED] | 60 V | 60 V |
| Continuous Drain Current (ID) | 46 A | 46 A | [DATA_NEEDED] | [DATA_NEEDED] | 46 A | 30 A |
| RDS(on) max at VGS=10V | 9.7 mOhm | 9.0 mOhm | 7.2 mOhm | [DATA_NEEDED] | 9.6 mOhm | 9.8 mOhm |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 | OptiMOS 5 | OptiMOS | TrenchFET Gen V | Shielded-Gate Trench |
| Pin-to-Pin Compatible | Yes (Power-SO8 standard) | Yes | Yes | Yes | Yes | Yes |
| Unit Price (1 pc, USD) | $1.58 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest-RDS(on) 60 V N-channel in the Infineon SuperSO8 family at the lowest price point (vs BSC090N06NS)
- Industry-standard Power-SO8 footprint with cross-brand compatibility (vs SiR626DP-T1-GE3)
- OptiMOS 5 trench technology with low figure-of-merit (FOM = RDS(on) x Qg) (vs NTMFS4C029N)
Design Notes
Estimated: at ID=20 A continuous with 50% duty cycle and RDS(on)=9.7 mOhm at Tj=100C, conduction loss is approximately (20^2)(0.0097)(0.5)=1.94 W. With the SuperSO8 RthJA of about 40 C/W on a 1 oz 1 sq-in copper pour, the junction rise is roughly 78C above ambient - acceptable up to 70C ambient. For continuous 30 A operation, increase copper area to at least 2 sq-in on both top and bottom layers, or attach a small aluminum heatsink to the drain pad.
The SuperSO8 (PG-TDSON-8-6) drain pad is the primary thermal path. Use a thermal via array directly under the exposed pad - at least 9-12 vias of 0.3 mm drill on 0.6 mm pitch connecting to a 2 oz bottom-layer copper pour. The source pins 1-3 must connect to a wide (>=3 mm) copper pour that extends to the source sense point of the controller to avoid parasitic source inductance that distorts the gate drive.
Estimated: keep the gate-loop inductance under 5 nH by placing the gate driver within 10 mm of pin 4 and routing gate-source traces as a tightly coupled differential pair. Add a 10-100 ohm gate-source resistor to dampen the miller-induced turn-on spike. Place a 10 kohm gate-source pull-down to hold the MOSFET off during controller power-up and prevent inadvertent turn-on from stray charge injection.
Do not parallel two BSC097N06NSATMA1 parts without individual gate resistors - the positive temperature coefficient of RDS(on) helps balance current, but shared gate traces can cause high-frequency oscillation above 50 MHz. Also avoid exceeding the avalanche energy (EAS) rating during body-diode reverse recovery - if the design has hard-switched inductive loads, add a snubber or use a part with higher EAS such as the IPB120N10S405ATMA1.
In high-frequency synchronous rectifiers above 200 kHz, the dV/dt-induced turn-on of the low-side MOSFET by the high-side transition (Miller effect) becomes a significant loss mechanism. Estimated: a 10 V/ns dV/dt across the 200 pF Crss produces about 2 mA of displacement current - multiply by the gate-loop inductance to predict the unwanted Vgs spike. Mitigation: minimize Crss charge by selecting a lower-Qg part, add a 4.7 nF Cgs capacitor, and use a negative turn-off bias of -3 V on the gate if the driver supports it.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose IAUC60N06S5L073ATMA1 for automotive. Halogen-free matte-tin terminations.
