BSC0993NDATMA1 vs BSC0911NDATMA1 Comparison
Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC0993NDATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | β |
| Configuration | Dual N-Channel (Array) | Dual N-Channel (2 N-CH) |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) @ Ta | 17 A | β |
| Package | PG-TISON-8 | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS trench MOSFET |
| Channel Mode | Enhancement | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| ESD Protection | Yes (integrated) | β |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: total gate charge] |
| Product Family | β | OptiMOS 25V |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) | β | 18 A |
| Pulsed Drain Current (IDM) | β | 30 A |
| Power Dissipation (PD) | β | 1 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) at 10V VGS] |