BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
MPN: BSC0911NDATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.46 | $2,300.00 |
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View Datasheet →BSC0911NDATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 25V |
| Configuration | Dual N-Channel (2 N-CH) |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 18 A |
| Pulsed Drain Current (IDM) | 30 A |
| Power Dissipation (PD) | 1 W |
| Package | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Channel Type | N-Channel Enhancement Mode |
| Technology | OptiMOS trench MOSFET |
| RoHS Status | Compliant |
BSC0911NDATMA1 Pin Configuration
| Pin 1 | S1 — Source of FET 1 (low-side source connection) |
| Pin 2 | G1 — Gate of FET 1 |
| Pin 3 | D1 — Drain of FET 1 (high-side drain / switch node) |
| Pin 4 | S2 — Source of FET 2 |
| Pin 5 | G2 — Gate of FET 2 |
| Pin 6 | D2 — Drain of FET 2 |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
BSC0911NDATMA1 is suitable for 6 applications: Synchronous Buck DC-DC Converter (12V input), USB-PD and Type-C Charging Rails, Server and Datacenter Point-of-Load, Battery Management and Load Switching (12V Systems), Motor Drive H-Bridge (Low-Voltage BLDC), Industrial 12V/24V Switch-Mode Power Supplies.
Synchronous Buck DC-DC Converter (12V input)
The BSC0911NDATMA1 is ideal as the integrated half-bridge in 12 V-input synchronous buck converters used in telecom and networking POL modules. With 25 V VDS rating providing 100%+ headroom over a nominal 12 V bus, 18 A continuous drain current per channel, and OptiMOS trench technology delivering low RDS(on) x Qg figure-of-merit, this device enables switching frequencies in the 500 kHz-1 MHz range. Placed between the 12 V input rail and the controller's high-side/low-side gate drivers, it minimizes PCB parasitic loop inductance versus discrete dual-FET solutions and reduces total BOM area by ~30-40%.
Recommended
USB-PD and Type-C Charging Rails
The BSC0911NDATMA1 fits USB Power Delivery buck-boost and Type-C charging rails where 5 V, 9 V, 15 V, and 20 V outputs are generated from a 5-20 V source. Its 25 V VDS rating covers the 20 V PD output with adequate margin, and 18 A continuous current per channel supports 60-100 W PD profiles. The PG-TISON-8 footprint keeps the half-bridge compact for small form-factor chargers. The low gate charge of OptiMOS technology minimizes switching losses at the high frequencies needed for small magnetics, and the exposed thermal pad aids heat removal in sealed adapters.
Recommended
Server and Datacenter Point-of-Load
The BSC0911NDATMA1 is well-suited to server and datacenter point-of-load (POL) converters stepping down 12 V intermediate bus to core voltages of 1 V or less for CPUs, ASICs, and memory. With 18 A continuous and 30 A pulsed current capability per channel, multiple BSC0911NDATMA1 phases can be paralleled for multi-phase VR topologies. The OptiMOS 25V platform's low RDS(on) reduces conduction loss at high duty cycles, while low Qg enables the high switching frequencies (>500 kHz) needed for small output inductors in dense server PCB layouts.
Recommended
Battery Management and Load Switching (12V Systems)
The BSC0911NDATMA1 functions as the high-side and low-side switches in 12 V battery management load switching and battery protection circuits. With 25 V VDS handling transients on 12 V battery rails and 18 A continuous current, it suits e-mobility and 12 V industrial battery systems. The dual-FET co-package simplifies PCB layout, reducing parasitic inductance that can otherwise cause VDS spikes during switch-off. The exposed thermal pad of PG-TISON-8 efficiently conducts heat away from the FETs into the PCB copper, supporting sustained 18 A operation in compact BMS designs.
Recommended
Motor Drive H-Bridge (Low-Voltage BLDC)
The BSC0911NDATMA1 can be configured as a half-bridge in low-voltage BLDC or brushed DC motor drive H-bridges for battery-powered tools, drones, and robotics. With 18 A continuous and 30 A pulsed current per channel, it drives sub-100 W motors from 5-18 V battery packs. The OptiMOS technology's low RDS(on) minimizes conduction loss and heat generation during PWM switching at 20-50 kHz. Two BSC0911NDATMA1 packages form a complete H-bridge (4 FETs) in a footprint roughly equivalent to one dual-FET plus discrete alternatives.
Recommended
Industrial 12V/24V Switch-Mode Power Supplies
The BSC0911NDATMA1 suits industrial 12V and 24V switch-mode power supplies where its 25 V VDS rating provides adequate margin over a 24 V rectified bus with transients. The dual N-channel co-packaging supports both forward and synchronous-rectifier topologies. With 18 A continuous current, it handles mid-power industrial SMPS in the 100-200 W range. The PG-TISON-8 footprint and exposed thermal pad support compact designs with natural-convection cooling in DIN-rail and panel-mount industrial enclosures.
Recommended
Recommended Products Summary
Engineering reference data for BSC0911NDATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0902NSATMA1 | BSC034N06NSATMA1 | BSC066N06NSATMA1 | BSC035N04LSGATMA1 | BSC011N03LSATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TISON-8 (8-PowerTDFN) | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same | PG-TISON-8 - same |
| Configuration | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel | Single N-Channel | Single N-Channel | Single N-Channel |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 60 V | 60 V | 40 V | 30 V | 60 V |
| Continuous Drain Current (ID) | 18 A | ~30 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Pulsed Drain Current (IDM) | 30 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD) | 1 W | 1 W (same package) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 25V trench | OptiMOS 25V trench | OptiMOS 60V | OptiMOS 60V | OptiMOS 40V logic-level | OptiMOS 30V | OptiMOS 5 60V |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Co-packaged dual N-channel FETs in PG-TISON-8 (vs Discrete dual-MOSFET solution (two DFN packages))
- OptiMOS 25V trench technology platform (vs Standard MOSFETs of equivalent rating)
- 18A continuous / 30A pulsed current per channel (vs BSC0902NSATMA1 (higher-current variant))
- RoHS compliant and Infineon OptiMOS reliability (vs Generic third-party 25V dual arrays)
Design Notes
Estimated: at 18 A continuous drain current and 25 V VDS, worst-case conduction loss in the low-side FET equals I^2 x RDS(on). With OptiMOS-class RDS(on) in the low single-digit milliohm range, total package dissipation is approximately 0.5-1 W at full load - approaching the 1 W package rating. The PG-TISON-8 exposed thermal pad must be soldered to at least 1 sq inch of copper pour on top and inner PCB layers with thermal vias. Without adequate copper, junction temperature can exceed 150 C and trigger thermal shutdown or long-term reliability degradation.
Place the gate-driver components within 5 mm of the gate pins to minimize parasitic gate-loop inductance. Keep the high-side and low-side gate traces short and away from the switch-node to avoid dv/dt-induced gate coupling. According to Infineon's PG-TISON-8 PCB layout guidelines, the switch-node copper area should be minimized to reduce radiated EMI, while the input capacitor loop (VIN to high-side FET to low-side FET to GND) must be kept tight - ideally a single layer ceramic capacitor directly between the FET drains and the ground return.
Do not exceed 25 V VDS under any operating condition including transients - apply sufficient input TVS protection if the bus can overshoot. Ensure the gate drive voltage does not exceed the maximum VGS rating (typically +/-20 V for OptiMOS). Avoid paralleling multiple BSC0911NDATMA1 packages without adequate gate-source resistor matching, as threshold voltage variation can cause current imbalance. Confirm that the controller's dead-time setting accounts for the OptiMOS turn-off delay to prevent shoot-through.
The PG-TISON-8 package requires an exposed-pad land pattern per Infineon's mechanical drawing - typical land dimensions are 5 mm x 6 mm with multiple thermal vias (0.3 mm drill, 1 mm pitch) connecting top, inner, and bottom copper layers for heat spreading. Use 2 oz copper on outer layers for high-current applications. The pin 1 orientation should follow the marking on the package top; the NC pins (7 and 8) can be left floating or tied to GND for easier routing.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade MOSFET array. For automotive 12V systems, choose an AEC-Q100 qualified OptiMOS variant.
