BSC0993NDATMA1 vs BSC097N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0993NDATMA1 BSC097N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Package PG-TISON-8 —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench)
Channel Mode Enhancement —
Operating Temperature Range -55C to +150C (junction) —
ESD Protection Yes (integrated) —
MSL Level [DATA_NEEDED: MSL level] 1 (Unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Operating Junction Temperature — -55C to +150C
Package / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

Datasheets & Resources

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