BSC0993NDATMA1 vs BSC097N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0993NDATMA1 disebabkan oleh Infineon dan BSC097N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0993NDATMA1 BSC097N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Kemasan PG-TISON-8 —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench)
Channel Mode Enhancement —
Gambaran Suhu Operasi -55C to +150C (junction) —
ESD Protection Yes (integrated) —
Aras MSL [DATA_NEEDED: MSL level] 1 (Unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Suhu Hubungan Operasi — -55C to +150C
Kemasan / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

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