BSC0993NDATMA1 vs BSC097N06NSATMA1 比較
詳細並排比較 BSC0993NDATMA1 由 Infineon 與 BSC097N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0993NDATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| 封裝 | PG-TISON-8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 (Trench) |
| Channel Mode | Enhancement | — |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| ESD Protection | Yes (integrated) | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (Unlimited) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| 工作接面溫度 | — | -55C to +150C |
| 封裝 / 外殼 | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |