BSC117N08NS5ATMA1 vs BSC060N10NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSC060N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveInfineon
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
BSC060N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC117N08NS5ATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS 3 (Trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 50 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Part Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Ta) | β | 14.9 A |
| Continuous Drain Current (ID, Tc) | β | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | β | 125 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 3.5 V |
| Operating Junction Temperature | β | -55 C to +150 C |
| Halogen-Free | β | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS value] |