BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC060N10NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.71 | $17.10 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for BSC060N10NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC060N10NS3 G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC070N10NS3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N06NS3GATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC117N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →BSC094N06LS5ATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →BSZ900N20NS3GATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC060N10NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Ta) | 14.9 A |
| Continuous Drain Current (ID, Tc) | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | 125 W |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V |
| Operating Junction Temperature | -55 C to +150 C |
| Technology | OptiMOS 3 (Trench MOSFET) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSC060N10NS3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (10V typical for full enhancement) |
| Pin 2 | Source — Source connection (tied to pins 3, 7, 8 for low RDS(on)) |
| Pin 3 | Source — Source connection |
| Pin 4 | Drain — Drain connection (also bonded to exposed thermal pad) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC, Tj=25C)
Typical Applications
BSC060N10NS3GATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectifier, Server and Datacenter SMPS, E-Bike and E-Mobility Battery Protection, Solar Micro-Inverter MPPT Stage, Industrial DC-DC Buck Converter, Brushless DC Motor Drive H-Bridge, Telecom Hot-Swap Controller Switch.
48V Telecom Synchronous Rectifier
The BSC060N10NS3GATMA1 fits 48 V telecom synchronous-rectifier positions because its 100 V VDS provides 2:1 headroom over the 48 V nominal bus while the 6 mOhm RDS(on) minimizes conduction loss in the secondary-side low-side MOSFET of forward or half-bridge converters. Placed as the synchronous FET driven by a gate-driver IC, it replaces Schottky diode pairs with a 30 percent FOM reduction versus OptiMOS 2, per Infineon datasheet, directly improving converter efficiency at 30 A continuous output. Compared to a discrete Schottky rectifier, it dissipates roughly half the conduction power in the same footprint.
Recommended
Server and Datacenter SMPS
In server and datacenter SMPS power supplies, the BSC060N10NS3GATMA1 serves as the synchronous-rectifier or low-side switch in 12 V, 24 V, and 48 V output bus converters. Its 6 mOhm RDS(on) and SuperSO8 5x6 mm footprint enable very high power density on the secondary side, with 90 A continuous drain current at TC=25 C adequate for kilowatt-class supplies. Per the OptiMOS 3 datasheet, the 30 percent FOM reduction versus prior generation translates directly to lower fan-forced cooling requirements and higher 80 Plus Titanium efficiency targets.
Recommended
E-Bike and E-Mobility Battery Protection
The BSC060N10NS3GATMA1 is well suited to e-bike and e-mobility battery-management systems where 36 V and 48 V battery packs require 100 V-rated MOSFETs for reverse-polarity and short-circuit protection. Its 6 mOhm RDS(on) keeps conduction loss below 5 W during 30 A peak discharge, and the SuperSO8 footprint saves PCB area inside the BMS housing. According to the Infineon datasheet, the OptiMOS 3 platform provides robust avalanche ruggedness for the inductive kickback paths common in motor-controller environments.
Recommended
Solar Micro-Inverter MPPT Stage
For solar micro-inverters and string inverters operating at 40 V to 60 V DC input, the BSC060N10NS3GATMA1 acts as the synchronous-rectifier MOSFET in the MPPT and DC-DC boost stages. Its 100 V VDS rating tolerates voltage transients from the PV panel, while the 6 mOhm RDS(on) at 10 V VGS maximizes peak efficiency during MPPT tracking. Per the Infineon datasheet, the device's small 5x6 mm SuperSO8 footprint allows designers to fit higher-power stages into micro-inverter housings without thermal compromise on standard 2 oz copper.
Recommended
Industrial DC-DC Buck Converter
In industrial 24 V to 48 V input buck and synchronous buck converters, the BSC060N10NS3GATMA1 is the ideal low-side or synchronous-rectifier MOSFET thanks to its 100 V VDS rating and 6 mOhm RDS(on). Per Infineon's OptiMOS 3 datasheet, the 30 percent FOM improvement over OptiMOS 2 enables higher switching frequencies (up to 500 kHz) without sacrificing efficiency. At 20 A continuous output the conduction loss is P = 20^2 x 0.006 = 2.4 W, easily handled by a 1 square inch copper pad with no heatsink.
Recommended
Brushless DC Motor Drive H-Bridge
The BSC060N10NS3GATMA1 can be used as the low-side FET in a brushless DC (BLDC) motor-drive H-bridge for industrial fans, pumps, and small EV traction drives. Its 6 mOhm RDS(on) and 90 A continuous drain current support multi-kilowatt peak motor power with appropriate heatsinking, while the 100 V VDS handles the inductive flyback of motor windings. Per Infineon's datasheet, the OptiMOS 3 family is qualified for industrial-grade temperature and reliability, making this part a strong fit for factory automation.
Recommended
Telecom Hot-Swap Controller Switch
In -48 V telecom hot-swap and OR-ing applications, the BSC060N10NS3GATMA1 acts as the main switching element that inrush-limits and protects downstream circuitry during board insertion. Its 100 V VDS handles the -48 V supply plus transient ringing, and the 6 mOhm RDS(on) minimizes steady-state loss. According to the Infineon OptiMOS 3 datasheet, the device's robust SOA at high peak currents supports hot-swap transient conditions where repetitive avalanche events occur during board plug-in.
Recommended
Recommended Products Summary
Engineering reference data for BSC060N10NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC060N10NS3 G | BSC070N10NS3GATMA1 | BSC076N06NS3GATMA1 | BSC117N08NS5ATMA1 | BSC094N06LS5ATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 60 V | 80 V | 60 V | 200 V |
| On-Resistance RDS(on) Max | 6 mOhm | 6 mOhm | 7 mOhm | 7.6 mOhm | 11.7 mOhm | 9.4 mOhm | 90 mOhm |
| Continuous Drain Current (ID, Tc) | 90 A | 90 A | 85 A | 85 A | 70 A | 80 A | 20 A |
| Power Dissipation (Tc=25C) | 125 W | 125 W | 125 W | 125 W | 104 W | 115 W | 125 W |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
| Gate Threshold VGS(th) | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 1.7 V to 2.7 V (logic level) | 1.0 V to 2.5 V (logic level) | 2.0 V to 3.5 V |
| Price @ 1000-pc (USD) | $0.95 | $0.95 | $0.88 | $0.75 | $0.85 | $0.72 | $1.10 |
Key Differentiators
- 30% FOM reduction vs prior OptiMOS generation (vs BSC070N10NS3GATMA1)
- Same package, lower RDS(on) than OptiMOS 5 alternatives (vs BSC117N08NS5ATMA1)
- 100V VDS rating with SuperSO8 thermal performance (vs BSC076N06NS3GATMA1)
Design Notes
Estimated: at VGS=10V, ID=30A continuous, and 6 mOhm RDS(on), conduction power dissipation is P = I^2 x R = 900 x 0.006 = 5.4 W. The PG-TDSON-8-1 (SuperSO8) package datasheet thermal resistance theta_JA is approximately 50 C/W on a 1 sq inch 2 oz copper pad, giving a junction temperature rise of 270 C above 25 C ambient - far exceeding the 150 C maximum junction rating. In practice, mount the exposed pad to a copper pour of at least 1 sq cm on each PCB side to keep junction rise below 50 C at continuous 30 A. For 50 A or higher continuous operation, add forced airflow or upgrade to a larger TO-220 or TO-263 package.
Layout the PG-TDSON-8-1 footprint with the exposed thermal pad soldered to a continuous copper plane that extends to multiple vias for bottom-side heat spreading. Per Infineon's PG-TDSON-8-1 land-pattern recommendation, use at least 6 thermal vias of 0.3 mm diameter under the pad. Keep the gate-trace short (under 5 mm) and surround it with a ground-return copper pour to minimize gate-loop inductance. Place the gate-driver IC within 10 mm of the gate pin to avoid ringing above the 20 V VGS maximum rating.
Do not exceed the 100 V VDS maximum - inductive transients in motor and SMPS applications can exceed this rating by 30 to 50 percent if snubbers are inadequate. Always add a gate-source resistor (10 kOhm to 100 kOhm) directly between gate and source pins to prevent floating-gate turn-on during high dV/dt events. For 48 V telecom and battery applications, derate VDS by at least 20 percent (target <= 80 V steady-state) for long-term reliability per Telcordia GR-63 requirements.
In synchronous buck and forward converter layouts, place the high-side and low-side MOSFETs on the same side of the PCB with a minimal power-loop area between them to reduce parasitic inductance. Reference Infineon application note 'AN 2012-09 - OptiMOS PCB Layout Guidelines' for a proven SuperSO8 footprint layout. Keep the input capacitor loop (VIN to high-side FET to ground) within 10 mm^2 to minimize switching-node ringing at 500 kHz+ switching frequencies.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade MOSFET. Lead-free matte-tin plating. Halogen-free status not explicitly confirmed in the verified data.
