BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
MPN: BSC117N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.86 | $8.60 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.46 | $2,300.00 |
Drop-in alternatives for BSC117N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC117N08NS5
✅ Drop-In📋 Reference alternative (not in catalog)
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View Datasheet →BSC117N08NS5ATMA1
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View Datasheet →IPD060N03LGATMA1
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View Datasheet →BSC117N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 |
| Technology | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 80 V |
| Continuous Drain Current (ID) max | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | 11.7 mOhm |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 50 W |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 |
BSC117N08NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (connected to drain tab via package) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain terminal / thermal pad (exposed) |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
Safe Operating Area (DC, Tc=25C)
Typical Applications
BSC117N08NS5ATMA1 is suitable for 6 applications: 48V Telecom / Server Synchronous Rectifier, Battery Management Protection FET (12V/24V e-mobility), Class-D Audio Amplifier Output Stage, Hot-Swap / OR-ing Switch for 48V Buses, Brushless DC (BLDC) Motor Drive Half-Bridge, Point-of-Load (POL) Synchronous Buck Switch.
48V Telecom / Server Synchronous Rectifier
The BSC117N08NS5ATMA1 fits the secondary-side synchronous-rectifier position in 48 V-input isolated DC-DC bricks for telecom and hyperscale server rails. The Infineon OptiMOS 5 process delivers up to 44% lower RDS(on) (11.7 mOhm max) and up to 44% lower output capacitance than the prior generation, which directly shrinks rectifier conduction loss at high output current and reduces switching loss at 300-500 kHz switching frequency. The 80 V VDS rating provides comfortable margin above a 48 V nominal bus including ringing during turn-off. Placed on the secondary side of a forward or half-bridge converter with a gate-drive IC such as the Infineon EiceDRIVER 2EDR family, the BSC117N08NS5ATMA1 enables >96% peak efficiency. Designers must still respect the SOA: continuous current should be limited to about 30 A on a 1 in² copper pad before derating kicks in.
Recommended
Battery Management Protection FET (12V/24V e-mobility)
In 12 V and 24 V battery packs for e-mobility, e-bikes, and mild-hybrid vehicles, the BSC117N08NS5ATMA1 is used as the low-side protection FET in a back-to-back source-connected configuration. The 80 V VDS rating easily covers 24 V nominal plus load-dump transients up to 35 V, and the 11.7 mOhm RDS(on) keeps continuous conduction loss under 5 W at typical 20 A discharge current. The SuperSO8 5x6 footprint allows compact pack-level PCB designs where the FET sits right next to the shunt resistor and battery-monitoring IC. Compared to older TO-220 protection FETs, the BSC117N08NS5ATMA1 saves roughly 70% board area while delivering equivalent thermal performance with proper copper-pour cooling. Designers must verify avalanche energy (EAS) from the datasheet against the worst-case inductive disconnect event.
Recommended
Class-D Audio Amplifier Output Stage
The BSC117N08NS5ATMA1 is well suited to the output half-bridge position of sub-100 W Class-D audio amplifiers, where it switches at 250-400 kHz to reproduce the PWM-modulated audio waveform. Its low RDS(on) (11.7 mOhm) keeps idle conduction loss low, and the low output capacitance reduces switching loss at the audio carrier frequency, helping total harmonic distortion (THD) stay below 0.01% on a well-designed output filter. The 80 V VDS rating supports +/-35 V rails typical of 100 W automotive and home-theater amplifiers. Two BSC117N08NS5ATMA1 in a half-bridge topology, driven by a gate-driver such as the IRS20957 family, deliver up to 200 W into 4 ohm with >92% efficiency, allowing fan-less designs when paired with a modest heatsink.
Recommended
Hot-Swap / OR-ing Switch for 48V Buses
In 48 V telecom and server power-entry modules, the BSC117N08NS5ATMA1 acts as the OR-ing or hot-swap switch that isolates a faulty supply from the shared bus. The 80 V VDS comfortably handles 48 V nominal plus transient ringing, and the 11.7 mOhm RDS(on) keeps continuous conduction loss at about 1 W per switch at typical 30 A load. With proper gate-drive ramp control (a 1 ms soft-start via a gate-source RC network), inrush current is limited to within SOA on every plug-in event. Compared to a Schottky-OR-ing solution, the BSC117N08NS5ATMA1 reduces forward drop by roughly 0.5 V at full load, eliminating a major source of heat in the power shelf. Designers must include a TVS clamp across drain-source to clamp avalanche events during hot-unplug.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridge
The BSC117N08NS5ATMA1 is used as the low-side switch in BLDC motor half-bridges for 24 V/36 V cordless tools, drone ESCs, and small e-mobility drives. The 80 V VDS covers 36 V battery stacks plus back-EMF transients during commutation, while the 11.7 mOhm RDS(on) keeps copper loss low at 20-30 A phase current. The SuperSO8 5x6 footprint allows three half-bridges (six FETs) plus gate drivers to fit on a sub-30 mm square PCB, which is critical for compact drone ESC designs. A 30 kHz PWM frequency is comfortably supported by the OptiMOS 5 switching losses. Pair the BSC117N08NS5ATMA1 with a three-phase gate-driver such as the DRV8313 and a Hall-sensor front-end for a complete sub-100 W BLDC drive.
Recommended
Point-of-Load (POL) Synchronous Buck Switch
The BSC117N08NS5ATMA1 serves as the low-side synchronous rectifier in 24 V-input POL converters that step down to 1-5 V rails for FPGAs, ASICs, and SoCs. The 80 V VDS comfortably covers a 24 V nominal bus plus tolerance, and the 11.7 mOhm RDS(on) reduces dead-time body-diode conduction loss at switching frequencies from 300 kHz to 1 MHz. Compared to a Schottky rectifier replacement, the synchronous-rectifier topology with the BSC117N08NS5ATMA1 typically improves light-load efficiency by 5-8% on a 12 V to 3.3 V buck. The SuperSO8 5x6 footprint keeps the FET footprint small enough to place it directly under the inductor, minimizing the high-di/dt switching loop and reducing EMI. Designers should parallel two BSC117N08NS5ATMA1 devices when continuous current exceeds 15 A to share thermal load.
Recommended
Recommended Products Summary
Engineering reference data for BSC117N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC117N08NS5 | BSC094N06LS5ATMA1 | IAUC100N10S5N040ATMA1 | IAUCN04S7N012ATMA1 | IPD060N03LGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) max | 80 V | 80 V | 60 V | 100 V | 40 V | 30 V |
| On-Resistance (RDS(on)) max | 11.7 mOhm | 11.7 mOhm | 9.4 mOhm | 4.0 mOhm | 1.2 mOhm | 6.0 mOhm |
| Continuous Drain Current (ID) | 49 A (Tc) | 49 A (Tc) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (Tc) | 50 W | 50 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Up to 44% lower RDS(on) and 44% lower output capacitance than the prior OptiMOS generation (vs Infineon OptiMOS 3 generation 80 V parts in same package)
- 80 V VDS rating with 11.7 mOhm RDS(on) in SuperSO8 5x6 (vs BSC094N06LS5ATMA1 (60 V, 9.4 mOhm))
- Industry-standard SuperSO8 5x6 footprint with pin-compatible drop-in across OptiMOS 5 family (vs Proprietary DPAK packages from other vendors)
Design Notes
Estimated: at continuous drain current of 30 A and RDS(on) of 11.7 mOhm, the BSC117N08NS5ATMA1 dissipates approximately 10.5 W as conduction loss alone. The PG-TDSON-8-7 package has a junction-to-ambient thermal resistance (theta_JA) of roughly 50 C/W on a 1 in² 2 oz copper pad, producing a junction temperature rise of ~525 C above ambient - clearly above the 150 C max. Designers MUST either parallel two devices (halving the loss) or attach a small clip-on heatsink, and verify with the manufacturer's SOA curve that the chosen operating point stays below the DC line at 30 A continuous. Never rely on the datasheet's TA rating alone - the TC rating of 50 W assumes an infinite heatsink that the PCB almost never provides.
The PG-TDSON-8-7 SuperSO8 5x6 package exposes the drain on the central thermal pad. To minimize parasitic inductance in the high-di/dt switching loop, place input/output capacitors and the gate-driver return path on the SAME PCB layer as the FET, with vias directly under the thermal pad stitching to the inner power plane. Keep the gate-loop area under 5 mm² by routing the gate-driver output directly to pin 4 (gate). Add a 10-47 ohm gate-source resistor to dampen parasitic ringing; do NOT omit the gate-source pull-down (typically 10 kohm) because the FET could turn on spuriously during power-up.
Critical pitfalls: (1) never operate the BSC117N08NS5ATMA1 above 80 V VDS even briefly - the avalanche breakdown is not guaranteed to clamp safely and will degrade the die; (2) never exceed VGS of +/-20 V (the OptiMOS 5 gate oxide absolute max) - in particular, gate-drive transients from a poorly snubbed bootstrap supply can spike above 20 V and damage the gate; (3) do not rely on the body diode for sustained reverse current - the OptiMOS 5 body diode has limited reverse-recovery performance, so use an external Schottky in parallel if the topology requires continuous reverse conduction. Also verify with the datasheet that EAS (single-pulse avalanche energy) is sufficient for any inductive kick events in your specific application.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - choose an Infineon automotive-grade part for automotive applications.
