BSC120N03LSGATMA1 vs ISC110N12NM6ATMA1 Comparison
Detailed side-by-side comparison of BSC120N03LSGATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSC120N03LSGATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 12 A | β |
| Continuous Drain Current (ID) at Tc=25C | 39 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | β |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 28 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 11 A |
| Continuous Drain Current (ID) at Tc | β | 62 A |
| On-Resistance RDS(on) max at VGS=10V | β | 9.8 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.1 V |
| Total Gate Charge (Qg) | β | 15.4 nC |
| Input Capacitance (Ciss) | β | 1.1 nF |
| Output Capacitance (Coss) | β | 330 pF |
| Reverse Transfer Capacitance (Crss) | β | 10 pF |
| Power Dissipation (Pd) at Tc | β | 94 W |
| Power Dissipation (Pd) at Ta | β | 3 W |
| Avalanche Energy (EAS) | β | 185 mJ |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |