BSC123N08NS3GATMA1 vs BSC118N10NSGATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BSC123N08NS3GATMA1 tarafından Infineon ve BSC118N10NSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BSC123N08NS3GATMA1 BSC118N10NSGATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 —
Channel Type N-Channel —
Configuration Single with built-in body diode —
Maximum Drain-Source Voltage (VDS) 80 V —
Maximum Continuous Drain Current (ID, Tc) 55 A —
Maximum Continuous Drain Current (ID, Ta) 11 A —
Maximum Pulsed Drain Current [DATA_NEEDED: pulsed drain current] —
Maximum RDS(on) @ VGS=10 V 12.3 mOhm —
Maximum Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc) 66 W —
Power Dissipation (Ta) 2.5 W —
İşletim Jant Sıcaklığı -55C to +150C -55 C to +150 C
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 1 (per JEDEC J-STD-020) —
RoHS Durumu Compliant with exemption Compliant
Automotive Qualified Yes (AEC-Q101) —
Product Family — OptiMOS 2
FET Type — N-Channel
Mode — Enhancement (Normal Level)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Ta=25C — 11 A
Continuous Drain Current (ID) at Tc=25C — 71 A
Power Dissipation (PD) at Tc=25C — 114 W
Technology — Trench MOSFET
Lead Plating — Pb-free
Klorürsüz — Yes
JEDEC Qualification — Qualified per target application
Target Application — High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM — Excellent (per datasheet)

Dökümanlar & Kaynaklar

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